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參數資料
| 型號： | SI5853DC-T1 |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | P-Channel 1.8-V (G-S) MOSFET With Schottky Diode |
| 中文描述： | P通道1.8 - V的肖特基二極管（GS）的MOSFET的 |
| 文件頁數： | 1/6頁 |
| 文件大小： | 122K |
| 代理商： | SI5853DC-T1 |
Si5853DC
Vishay Siliconix
Document Number: 71239
S-21251—Rev. B, 05-Aug-02
www.vishay.com
2-1
P-Channel 1.8-V (G-S) MOSFET With Schottky Diode
MOSFET PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
(
)
I
D
(A)
0.110 @ V
GS
= --4.5 V
0.160 @ V
GS
= --2.5 V
0.240 @ V
GS
= --1.8 V
--3.6
--20
--3.0
--2.4
SCHOTTKY PRODUCT SUMMARY
V
KA
(V)
V
f
(v)
Diode Forward Voltage
I
F
(A)
20
0.48 V @ 0.5 A
1.0
Bottom View
1206-8 ChipFE
T
t
A
A
S
G
K
K
D
D
1
Marking Code
JA
XX
Lot Traceability
and Date Code
Part # Code
K
A
S
G
D
P-Channel MOSFET
Ordering Information:
Si5853DC-T1
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
_
C UNLESS OTHERWISE NOTED)
Parameter
Symbol
5 sec
Steady State
Unit
Drain-Source Voltage (MOSFET and Schottky)
V
DS
V
KA
--20
Reverse Voltage (Schottky)
20
V
Gate-Source Voltage (MOSFET)
V
GS
8
8
Continuous Drain Current (T
J
= 150
_
C) (MOSFET)
a
T
A
= 25
_
C
I
D
--3.6
--2.7
T
A
= 85
_
C
--2.6
--1.9
Pulsed Drain Current (MOSFET)
Continuous Source Current (MOSFET Diode Conduction)
a
I
DM
I
S
I
F
I
FM
--10
A
--1.8
--0.9
Average Foward Current (Schottky)
1.0
Pulsed Foward Current (Schottky)
7
Maximum Power Dissipation (MOSFET)
a
T
A
= 25
_
C
T
A
= 85
_
C
T
A
= 25
_
C
T
A
= 85
_
C
2.1
1.1
P
D
1.1
0.6
W
Maximum Power Dissipation (Schottky)
a
1.3
0.96
0.68
0.59
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
b, c
T
J
, T
stg
--55 to 150
_
C
260
Notes
a.
b.
Surface Mounted on 1” x1” FR4 Board.
See Reliability Manual for profile. The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation
process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder intercon-
nection.
Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
c.
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相關代理商/技術參數 |
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| SI5853DC-T1-E3 | 功能描述:MOSFET 20V 3.6A 2.1W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI5853DDC | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:P-Channel 20-V (D-S) MOSFET with Schottky Diode |
| SI5853DDC-T1-E3 | 功能描述:MOSFET 20V 4.0A 3.1W 105mohm @ 4.5V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI5855CDC | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:P-Channel 20-V (D-S) MOSFET With Schottky Diode |
| Si5855CDC-T1-E3 | 功能描述:MOSFET 20V 3.7A 2.8W 144mohm @ 4.5V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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