- 您現在的位置：買賣IC網 > PDF目錄368618 > Si6423DQ (Vishay Intertechnology,Inc.) P-Channel 12-V (D-S) MOSFET PDF資料下載
參數資料
| 型號： | Si6423DQ |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | P-Channel 12-V (D-S) MOSFET |
| 中文描述： | P溝道12 V的（副）MOSFET的 |
| 文件頁數： | 1/5頁 |
| 文件大?。?/td> | 42K |
| 代理商： | SI6423DQ |
FEATURES
TrenchFET Power MOSFET
APPLICATIONS
Load Switch
Si6423DQ
Vishay Siliconix
New Product
Document Number: 72257
S-31419—Rev. A, 07-Jul-03
www.vishay.com
1
P-Channel 12-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
( )
I
D
(A)
0.0085 @ V
GS
= -4.5 V
-9.5
-12
0.0106 @ V
GS
= -2.5 V
-8.5
0.014 @ V
GS
= -1.8 V
-7.5
D
S
S
G
1
2
3
4
8
7
6
5
D
S
S
D
TSSOP-8
Top View
S*
G
D
P-Channel MOSFET
* Source Pins 2, 3, 6 and 7
must be tied common.
Ordering Information:
Si6423DQ
Si6423DQ-T1 (with Tape and Reel)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs
Steady State
Unit
Drain-Source Voltage
V
DS
-12
V
Gate-Source Voltage
V
GS
8
Continuous Drain Current
(T
J
= 150 C)
a
T
A
= 25 C
I
D
-9.5
-8.2
T
A
= 70 C
-8
-6.5
A
Pulsed Drain Current (10 s Pulse Width)
I
DM
-30
Continuous Source Current (Diode Conduction)
a
I
S
-1.35
-0.95
Maximum Power Dissipation
a
T
A
= 25 C
P
D
1.5
1.05
W
T
A
= 70 C
1.0
0.67
Operating Junction and Storage Temperature Range
T
J
, T
stg
-55 to 150
C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient
t A bi
a
t
10 sec
R
thJA
60
83
Steady State
100
120
C/W
Maximum Junction-to-Foot
Steady State
R
thJF
35
45
Notes
a.
Surface Mounted on 1” x 1” FR4 Board.
相關PDF資料 |
PDF描述 |
|---|---|
| SI6542DQ | P-Channel 20-V (D-S) MOSFET,Low-Threshold |
| SI6562DQ | N- and P-Channel 2.5-V (G-S) MOSFET |
| SI6801DQ | SPICE Device Model Si6801DQ |
| SI6802DQ | N-Channel, Reduced Qg, Fast Switching MOSFET |
| Si6820DQ | N-Channel, Reduced Qg, MOSFET with Schottky Diode |
相關代理商/技術參數 |
參數描述 |
|---|---|
| SI6423DQ_05 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:P-Channel 12-V (D-S) MOSFET |
| SI6423DQ-T1-E3 | 功能描述:MOSFET 12V 9.5A 1.5W 8.5mohm @ 4.5V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI6423DQ-T1-GE3 | 功能描述:MOSFET 12V 9.5A 1.5W 8.5mohm @ 4.5V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI6426 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:20V N-Channel PowerTrench MOSFET |
| SI6426DQ | 功能描述:MOSFET 20V/8V NCh MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
發布緊急采購，3分鐘左右您將得到回復。