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參數資料
| 型號： | Si7866DP |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | N-Channel 20-V (D-S) MOSFET |
| 中文描述： | N溝道20 - V（下局副局長）MOSFET的 |
| 文件頁數： | 1/4頁 |
| 文件大小： | 43K |
| 代理商： | SI7866DP |
FEATURES
TrenchFET Power MOSFET
Low r
DS(on)
PWM (Q
gd
and R
G
) Optimized
APPLICATIONS
Low-Side MOSFET in Synchronous Buck
DC/DC Converters in Desktops
Low Output Voltage Synchronous Rectifier
Si7866DP
Vishay Siliconix
New Product
Document Number: 71848
S-21412—Rev. B, 05-Aug-02
www.vishay.com
1
N-Channel 20-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
( )
I
D
(A)
0.0025 @ V
GS
= 10 V
0.00375 @ V
GS
= 4.5 V
29
20
25
1
2
3
4
5
6
7
8
S
S
S
G
D
D
D
D
6.15 mm
5.15 mm
PowerPAK SO-8
Bottom View
N-Channel MOSFET
G
D
S
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs
Steady State
Unit
Drain-Source Voltage
V
DS
20
Gate-Source Voltage
V
GS
20
V
T
A
= 25 C
29
18
Continuous Drain Current
(T
J
= 150 C)
a
T
A
= 70 C
I
D
25
14
Pulsed Drain Current (10 s Pulse Width)
I
DM
60
A
Continuous Source Current (Diode Conduction)
a
I
S
4.5
1.6
T
A
= 25 C
5.4
1.9
Maximum Power Dissipation
a
T
A
= 70 C
P
D
3.4
1.2
W
Operating Junction and Storage Temperature Range
T
J
, T
stg
-55 to 150
C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
t
10 sec
18
23
Maximum Junction-to-Ambient
a
Steady State
R
thJA
50
65
C/W
Maximum Junction-to-Case (Drain)
Steady State
R
thJC
1.0
1.5
Notes
a.
Surface Mounted on 1” x 1” FR4 Board.
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相關代理商/技術參數 |
參數描述 |
|---|---|
| SI7866DP-T1 | 功能描述:MOSFET 20V 29A 5.4W 2.5mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI7868ADP | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Si7868ADP vs. Si7868DP Specification Comparison |
| SI7868ADP-T1-E3 | 功能描述:MOSFET 20V 40A 83W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI7868ADP-T1-GE3 | 功能描述:MOSFET 20V 40A 83W 2.25mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI7868DP | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Si7868ADP vs. Si7868DP Specification Comparison |
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