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參數資料
| 型號： | SI7872DP |
| 廠商： | Vishay Intertechnology,Inc. |
| 元件分類： | MOSFETs |
| 英文描述： | Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode |
| 中文描述： | 雙N溝道30 V的（副）MOSFET的肖特基二極管 |
| 文件頁數： | 1/9頁 |
| 文件大小： | 68K |
| 代理商： | SI7872DP |
FEATURES
LITTLE FOOT
Plus
Schottky
PWM Optimized
New Low Thermal Resistance PowerPAK
package with low 1.07 mm profile
APPLICATIONS
Asymmetrical Buck-Boost DC/DC Converter
Si7872DP
Vishay Siliconix
New Product
Document Number: 72035
S-21978—Rev. A, 04-Nov-02
www.vishay.com
1
Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
( )
I
D
(A)
0.022 @ V
GS
= 10 V
0.030 @ V
GS
= 4.5 V
0.022 @ V
GS
= 10 V
0.028 @ V
GS
= 4.5 V
10
Channel-1
8
30
10
Channel-2
8
SCHOTTKY PRODUCT SUMMARY
V
DS
(V)
V
SD
(V)
Diode Forward Voltage
I
F
(A)
30
0.50 V @ 1.0 A
3.0
N-Channel MOSFET
D
1
G
1
S
1
N-Channel MOSFET
D
2
G
2
S
2
Schottky Diode
1
2
3
4
5
6
7
8
S1
G1
S2
G2
D1
D1
D2
D2
6.15 mm
5.15 mm
Bottom View
PowerPAK SO-8
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C UNLESS OTHERWISE NOTED)
10 secs
Steady State
Parameter
Symbol
Channel-1
Channel-2
Channel-1
Channel-2
Unit
Drain-Source Voltage
V
DS
V
GS
30
Gate-Source Voltage
20
12
20
12
V
T
A
= 25 C
T
A
= 70 C
10
6.4
Continuous Drain Current
(T
J
= 150 C)
a
I
D
7
5.1
Pulsed Drain Current
I
DM
I
S
30
A
Continuous Source Current (Diode Conduction)
a
2.9
1.1
T
A
= 25 C
T
A
= 70 C
3.5
1.4
Maximum Power Dissipation
a
P
D
2.2
0.9
W
Operating Junction and Storage Temperature Range
T
J
, T
stg
-55 to 150
C
THERMAL RESISTANCE RATINGS
MOSFET
Schottky
Parameter
Symbol
Typical
Maximum
Typical
Maximum
Unit
t
10 sec
26
35
26
35
Maximum Junction-to-Ambient
a
Steady-State
R
thJA
60
85
60
85
C/W
Maximum Junction-to-Case (Drain)
Steady-State
R
thJC
4.1
6.0
4.1
6.0
Notes
a.
Surface Mounted on 1” x 1” FR4 Board.
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相關代理商/技術參數 |
參數描述 |
|---|---|
| SI7872DP-T1 | 功能描述:MOSFET 30V 10A 1.4W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI7872DP-T1-E3 | 功能描述:MOSFET 30V 10A 0.022Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI7872DP-T1-GE3 | 功能描述:MOSFET 30V 10A 3.5W 22mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI7880ADP-T1 | 制造商:Vishay Siliconix 功能描述:TRANS MOSFET N-CH 30V 31A 8PIN PWRPAK SO - Tape and Reel |
| SI7880ADP-T1-E3 | 功能描述:MOSFET 30V 40A 83W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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