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參數(shù)資料
| 型號： | SIGC11T60NC |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | IGBT Chip in NPT-technology |
| 中文描述： | 在不擴散核武器條約IGBT芯片技術(shù) |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 83K |
| 代理商： | SIGC11T60NC |
SIGC11T60NC
Edited by INFINEON Technologies AI PS DD HV3, L 7302-M, Edition 2, 28.11.2003
IGBT Chip in NPT-technology
FEATURES:
600V NPT technology
100μm chip
positive temperature coefficient
easy paralleling
This chip is used for:
IGBT Modules
Applications:
drives
G
C
E
Chip Type
V
CE
I
Cn
Die Size
Package
Ordering Code
Q67050-A4158-
A001
SIGC11T60NC
600V
10A
3.25 x 3.25 mm
2
sawn on foil
MECHANICAL PARAMETER:
Raster size
3.25 x 3.25
Area total / active
10.6 / 7.4
Emitter pad size
2 x 1.6
Gate pad size
1.08 x 0.68
mm
2
Thickness
100
μm
Wafer size
150
mm
Flat position
0
deg
Max.possible chips per wafer
1414
Passivation frontside
Photoimide
Emitter metallization
3200 nm Al Si 1%
Collector metallization
1400 nm Ni Ag –system
suitable for epoxy and soft solder die bonding
Die bond
electrically conductive glue or solder
Wire bond
Al,
≤
500μm
Reject Ink Dot Size
0.65mm ; max 1.2mm
Recommended Storage Environment
store in original container, in dry nitrogen,
< 6 month at an ambient temperature of 23°C
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SIGC11T60SNC | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:IGBT Chip in NPT-technology |
| SIGC121T120R2C | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:IGBT Chip in NPT-technology |
| SIGC121T120R2CL | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:IGBT Chip in NPT-technology |
| SIGC121T120R2CS | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:IGBT Chip in NPT-technology |
| SIGC121T60NR2C | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:IGBT Chip in NPT-technology |
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