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參數資料
| 型號： | SIGC25T120CS |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | IGBT Chip in NPT-technology |
| 中文描述： | 在不擴散核武器條約IGBT芯片技術 |
| 文件頁數： | 1/4頁 |
| 文件大小： | 73K |
| 代理商： | SIGC25T120CS |
SIGC25T120CS
Edited by INFINEON Technologies AI PS DD HV3, L 7141-S, Edition 2, 03.09.2003
IGBT Chip in NPT-technology
FEATURES:
1200V NPT technology
180μm chip
low turn-off losses
short tail current
positive temperature coefficient
easy paralleling
Chip Type
This chip is used for:
Applications:
drives, SMPS, resonant
applications
G
C
E
V
CE
I
Cn
Die Size
5.71 x 4.53 mm
2
Package
Ordering Code
SIGC25T120CS
1200V
15A
sawn on foil Q67050-A4114
MECHANICAL PARAMETER:
Raster size
5.71 x 4.53
Emitter pad size
2 x (2.18 x 1.6)
Gate pad size
1.09 x 0.68
Area total / active
25.9 / 18.7
mm
2
Thickness
180
μm
Wafer size
150
mm
Flat position
270
grd
Max.possible chips per wafer
555 pcs
Passivation frontside
Photoimide
Emitter metallization
3200 nm Al Si 1%
Collector metallization
1400 nm Ni Ag –system
suitable for epoxy and soft solder die bonding
Die bond
electrically conductive glue or solder
Wire bond
Al, <500μm
Reject Ink Dot Size
0.65mm ; max 1.2mm
Recommended Storage Environment
store in original container, in dry nitrogen,
< 6 month at an ambient temperature of 23°C
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相關代理商/技術參數 |
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| SIGC25T120CS2 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:IGBT Chip in NPT-technology |
| SIGC25T60NC | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:IGBT Chip in NPT-technology |
| SIGC25T60SNC | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:IGBT Chip in NPT-technology 600V NPT technology 100μm chip short circuit prove |
| SIGC25T60UN | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:HIGHT SPEED IGBT CHIP IN NPT-TECHNOLOGY |
| SIGC28T60 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:IGBT3 Chip |
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