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參數資料
| 型號： | MC-4516CB64S |
| 廠商： | NEC Corp. |
| 英文描述： | 16 M-Word By 16-Bit Synchronous Dynamic RAM Module(16 M×16位同步動態RAM 模塊) |
| 中文描述： | 16米，由16個字位同步動態隨機存儲器模塊（16米× 16位同步動態內存模塊） |
| 文件頁數： | 1/16頁 |
| 文件大小： | 138K |
| 代理商： | MC-4516CB64S |
The information in this document is subject to change without notice.
1998
DATA SHEET
MOS INTEGRATED CIRCUIT
MC-4516CB64S
16 M-WORD BY 64-BIT
SYNCHRONOUS DYNAMIC RAM MODULE (SO DIMM)
Document No. M13611EJ2V0DS00 (2nd edition)
Date Published September 1998 NS CP(K)
Printed in Japan
The mark
shows major revised points.
Description
The MC-4516CB64S is a 16,777,216 words by 64 bits synchronous dynamic RAM module (Small Outline DIMM) on
which 8 pieces of 128 M SDRAM :
μ
PD45128841 are assembled.
This module provides high density and large quantities of memory in a small space without utilizing the surface-
mounting technology on the printed circuit board.
Decoupling capacitors are mounted on power supply line for noise reduction.
Features
16,777,216 words by 64 bits organization
Clock frequency and Clock access time
Family
/CAS Latency
Clock frequency
Burst cycle time
Power consumption (MAX.)
(MAX.)
(MIN.)
Active
Standby
(CMOS level input )
MC-4516CB64S-A80
CL = 3
125 MHz
6
ns
7,776 mW
14.4 mW
CL = 2
100 MHz
6
ns
7,488 mW
MC-4516CB64S-A10
CL = 3
100 MHz
6
ns
7,200 mW
CL = 2
77 MHz
7
ns
6,912 mW
MC-4516CB64S-A10B
CL = 3
100 MHz
7
ns
6,624 mW
CL = 2
67 MHz
8
ns
6,336 mW
Fully Synchronous Dynamic RAM, with all signals referenced to a positive clock edge
Pulsed interface
Possible to assert random column address in every cycle
Quad internal banks controlled by BA0 and BA1 (Bank Select)
Programmable burst-length (1, 2, 4, 8 and Full Page)
Programmable wrap sequence (Sequential
/
Interleave)
Programmable /CAS latency (2, 3)
Automatic precharge and controlled precharge
CBR (Auto) refresh and self refresh
Single +3.3
V
±
0.3
V power supply
LVTTL compatible
4,096 refresh cycles/64
ms
Burst termination by Burst Stop command and Precharge command
144-pin small outline dual in-line memory module (Pin pitch = 0.8
mm)
Unbuffered type
Serial PD
相關PDF資料 |
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| MC-4516CC725 | 16M-Word By 64-BIT Dynamic RAM Module(動態RAM模塊) |
| MC-4516CC726 | 16M-Word By 72-BIT Dynamic RAM Module(16M×72位動態RAM模塊) |
| MC-4516CD641ES-A10 | 16M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE SO DIMM |
| MC-4516CD641ES-A80 | 16M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE SO DIMM |
| MC-4516CD641ES | 16M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE SO DIMM |
相關代理商/技術參數 |
參數描述 |
|---|---|
| MC-4516CD641ES | 制造商:NEC 制造商全稱:NEC 功能描述:16M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE SO DIMM |
| MC-4516CD641ES-A10 | 制造商:NEC 制造商全稱:NEC 功能描述:16M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE SO DIMM |
| MC-4516CD641ES-A80 | 制造商:NEC 制造商全稱:NEC 功能描述:16M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE SO DIMM |
| MC-4516CD641PS | 制造商:NEC 制造商全稱:NEC 功能描述:16M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE SO DIMM |
| MC-4516CD641PS-A10 | 制造商:NEC 制造商全稱:NEC 功能描述:16M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE SO DIMM |
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