- 您現在的位置：買賣IC網 > PDF目錄26881 > SLD-69C1D PHOTO DIODE PDF資料下載
參數資料
| 型號： | SLD-69C1D |
| 元件分類： | 光敏二極管 |
| 英文描述： | PHOTO DIODE |
| 文件頁數： | 1/1頁 |
| 文件大小： | 22K |
| 代理商： | SLD-69C1D |
5200 St. Patrick St., Montreal
The Old Railway, Princes Street
Que., H4E 4N9, Canada
Ulverston, Cumbria, LA12 7NQ, UK
Tel: 514-768-8000
Tel: 01 229 581 551
Fax: 514-768-8889
Fax: 01 229 581 554
QF-84
SLD-69C1
Planar Photodiode
Features
Planar Photodiode
Wide receiving angle
Large active area chip
Fast switching time
Low leakage current
Linear response vs irradiance
Multiple dark current ranges available
Description
The planar photodiode is designed to operate in
either photovoltaic or photoconductive modes. High
sensitivity and low dark current allow use in even low
light applications. The large area silicon photodiode
measures 3.6 mm X 6.1 mm (0.140” x 0.240”). The
photodiode is supplied on a ceramic base with a clear
epoxy dome window.
Absolute Maximum Ratings
Storage Temperature
-20
°C to +75°C
Operating Temperature
-20
°C to +75°C
Soldering Temperature (3)
260
°C
Notes: (1) Ee = light source @ 2854
°K
(2) Ee = light source @
λ = 880 nm
(3) >2 mm from case for < 5 sec.
Clear
Epoxy
Anode +
Cathode -
min.
max.
Red dot
Chip size: 3.6 mm X 6.1 mm
Active area: 18.3 sq.mm.
Dimensions in mm.
9.2
7.9
3.4
19.0
1.8
0.5
6.7
1.0
0.8
0.6
0.4
100°
90°
80°
70°
60°
50°
40°
30°
20°
10°
Half Angle = 60°
Directional Sensitivity Characteristics
20°
40°
60°
80°
100° 120°
0.0
0.2
0.4
0.6
0.8
1.0
Electrical Characteristics (TA=25
°C unless otherwise noted)
Symbol
Parameter
MIN
TYP
MAX
UNITS
TEST CONDITIONS
ISC
Short Circuit Current
600
900
A
VR=0V, Ee=25mW/cm
2 (1)
VOC
Open Circuit Voltage
0.40
V
Ee=25mw/cm
2
(1)
ID
Reverse Dark Current:
SLD-69C1A
100
nA
VR = 0.1V, Ee = 0
SLD-69C1B
100
nA
VR = 5V, Ee = 0
SLD-69C1C
20
nA
VR = 5V, Ee = 0
SLD-69C1D
5
nA
VR = 5V, Ee = 0
SLD-69C1E
1
nA
VR = 5V, Ee = 0
CJ
Junction Capacitance
350
pF
VR=0, Ee=0, f=1MHz
tR
Rise Time
8
s
VR=10V, RL=1k
(2)
tF
Fall Time
10
s
VR=10V, RL=1k
(2)
TCI
ISC Temp. Coef.
+0.2
%/
°C (1)
VBR
Reverse Breakdown Voltage
50
V
IR = 100
A
λ
P
Maximum Sensitivity Wavelength
930
nm
λ
R
Sensitivity Spectral Range
400
1100
nm
θ
1/2
Acceptance Half Angle
60
deg
(off center-line)
Specifications are subject to change without notice.
101651 REV 2
相關PDF資料 |
PDF描述 |
|---|---|
| SLD-70C1E | PHOTO DIODE |
| SLD-70C1A | PHOTO DIODE |
| SLD-70IR1D | PHOTO DIODE |
| SLD-70IR1C | PHOTO DIODE |
| SLD104AV | 780 nm, LASER DIODE |
相關代理商/技術參數 |
參數描述 |
|---|---|
| SLD6R-1LF | 制造商:FCI 功能描述:Conn FFC/FPC Connector SKT 6 POS 2.5mm Solder RA Thru-Hole |
| SLD6R-2 | 制造商:FCI 功能描述:CONN FFC/FPC CONN SKT 6 POS 2.5MM SLDR RA TH - Trays |
| SLD6S-1 | 功能描述:SLD6S-1-SLD6S-1 RoHS:否 類別:連接器，互連式 >> FFC，FPC（扁平軟線）- 連接器 - 面板安裝 系列:SLD 標準包裝:1 系列:Easy-On™ 54809 連接器類型:底部觸點 位置數:31 間距:0.012"（0.30mm） FFC，FCB 厚度:0.20mm 板上方高度:0.051"（1.30mm） 安裝類型:表面貼裝，直角 線纜端類型:直形 端子:焊接 鎖定功能:觸發鎖 特點:零插入力（ZIF） 包裝:Digi-Reel® 觸點表面涂層:錫鉍 觸點涂層厚度:- 工作溫度:-20°C ~ 85°C 額定電流:0.300A 額定電壓:50V 體座材料:液晶聚合物（LCP） 其它名稱:WM6540DKR |
| SLD6S-1LF | 功能描述:FFC & FPC連接器 6P TOP ENT STRT ZIF RoHS:否 制造商:JAE Electronics 產品類型:Plugs 系列:HD 節距:0.5 mm 位置/觸點數量:40 安裝角: 安裝風格:Cable 外殼材料:Plastic 觸點材料:Copper Alloy 觸點電鍍:Gold 電壓額定值:100 V per contact 電流額定值:0.24 A to 1 A |
| SLD-70 BG2A | 制造商:Silonex Inc (Casco Products) 功能描述:PHOTODIODE BG FILTERED 制造商:Silonex Inc (Casco Products) 功能描述:PHOTODIODE, BG FILTERED 制造商:Silonex Inc (Casco Products) 功能描述:DIODE, PHOTO, 550NM, 60; Wavelength of Peak Sensitivity:550nm; Angle of Half Sensitivity :60; Dark Current:100nA; Diode Case Style:Radial Leaded; No. of Pins:2; Operating Temperature Min:-20C; Operating Temperature Max:85C ;RoHS Compliant: Yes |
發布緊急采購，3分鐘左右您將得到回復。