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參數資料
| 型號： | SPP42N03S2L-13 |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | OptiMOS Power-Transistor |
| 中文描述： | 的OptiMOS功率晶體管 |
| 文件頁數： | 1/10頁 |
| 文件大?。?/td> | 541K |
| 代理商： | SPP42N03S2L-13 |
SPI42N03S2L-13
SPP42N03S2L-13 SPB42N03S2L-13
Opti
MOS
Power-Transistor
Features
N-channel
Enhancement mode
Logic level
Excellent gate charge x
R
DS(on)
product (FOM)
Superior thermal resistance
175 °C operating temperature
Avalanche rated
d
v
/d
t
rated
Maximum ratings,
at
T
j
=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Unit
Continuous drain current
1)
I
D
T
C
=25 °C
42
A
T
C
=100 °C
42
Pulsed drain current
I
D,pulse
T
C
=25 °C
248
Avalanche energy, single pulse
E
AS
I
D
=42 A,
R
GS
=25
110
mJ
Repetitive avalanche energy
E
AR
limited by
T
jmax
2)
8
mJ
Reverse diode d
v
/d
t
d
v
/d
t
I
D
=42 A,
V
DS
=24 V,
d
i
/d
t
=200 A/μs,
T
j,max
=175 °C
6
kV/μs
Gate source voltage
V
GS
±20
V
Power dissipation
P
tot
T
C
=25 °C
83
W
Operating and storage temperature
T
j
,
T
stg
-55 ... 175
°C
IEC climatic category; DIN IEC 68-1
55/175/56
Value
V
DS
30
V
R
DS(on),max
12.9
m
I
D
42
A
Product Summary
Type
Package
Ordering Code
Marking
SPP42N03S2L-13
P-TO220-3-1
Q67042-S4034
2N03L13
SPB42N03S2L-13
P-TO263-3-2
Q67042-S4035
2N03L13
SPI42N03S2L-13
P-TO262-3-1
Q67042-S4104
2N03L13
P-TO220-3-1
P-TO263-3-2
P-TO262-3-1
Rev. 2.0
page 1
2004-06-04
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