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參數(shù)資料
| 型號(hào)： | STB40NE03L-20 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | N - CHANNEL ENHANCEMENT MODE ” SINGLE FEATURE SIZE ” POWER MOSFET |
| 中文描述： | ? -通道增強(qiáng)型“特征尺寸單”功率MOSFET |
| 文件頁(yè)數(shù)： | 1/8頁(yè) |
| 文件大小： | 101K |
| 代理商： | STB40NE03L-20 |
STB40NE03L-20
N - CHANNEL ENHANCEMENT MODE
” SINGLE FEATURE SIZE
” POWER MOSFET
I
TYPICAL R
DS(on)
= 0.014
I
EXCEPTIONAL dv/dt CAPABILITY
I
LOW GATE CHARGE A 100
o
C
I
APPLICATION ORIENTED
CHARACTERIZATION
I
FOR THROUGH-HOLE VERSION CONTACT
SALESOFFICE
DESCRIPTION
This Power MOSFET is the latestdevelopment of
SGS-THOMSON unique ”Single Feature Size
”
strip-based process. The
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a remark-
able manufacturingreproducibility.
resulting transistor
APPLICATIONS
I
HIGH CURRENT, HIGH SPEEDSWITCHING
SOLENOIDAND RELAY DRIVERS
I
MOTOR CONTROL, AUDIO AMPLIFIERS
I
DC-DC & DC-AC CONVERTERS IN HIGH
PERFORMANCE VRMs
I
AUTOMOTIVE ENVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMPDRIVERS, Etc.)
ABSOLUTE MAXIMUM RATINGS
INTERNAL SCHEMATIC DIAGRAM
November 1997
Symbol
Parameter
Value
Unit
V
DS
Drain-source Voltage (V
GS
= 0)
30
V
V
DGR
Drain- gate Voltage (R
GS
= 20 k
)
Gate-source Voltage
Drain Current (continuous) at T
c
= 25
o
C
Drain Current (continuous) at T
c
= 100
o
C
30
±
15
V
V
GS
V
I
D
I
D
40
A
28
A
I
DM
(
)
Drain Current (pulsed)
Total Dissipation at T
c
= 25
o
C
160
A
P
tot
80
W
Derating Factor
0.53
W/
o
C
dv/dt(
1
)
Peak Diode Recovery voltage slope
7
V/ns
o
C
o
C
T
stg
Storage Temperature
-65 to 175
T
j
Max. Operating Junction Temperature
(
) Pulsewidth limited by safe operating area
175
(
1
) I
SD
≤
40 A,di/dt
≤
300 A/
μ
s, V
DD
≤
V
(BR)DSS
, T
j
≤
T
JMAX
TYPE
V
DSS
R
DS(on)
I
D
1
3
D
2
PAK
TO-263
(suffix ”T4”)
1/8
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