- 您現(xiàn)在的位置：買(mǎi)賣(mài)IC網(wǎng) > PDF目錄382558 > STD4NB25 (意法半導(dǎo)體) N-Channel 250V-0.95Ω-4A-DPAK PowerMESH MOSFET(N溝道MOSFET) PDF資料下載
參數(shù)資料
| 型號(hào)： | STD4NB25 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | N-Channel 250V-0.95Ω-4A-DPAK PowerMESH MOSFET(N溝道MOSFET) |
| 中文描述： | N溝道250V -0.95Ω- 4A條，DPAK封裝PowerMESH MOSFET的（不適用溝道MOSFET的） |
| 文件頁(yè)數(shù)： | 1/8頁(yè) |
| 文件大小： | 90K |
| 代理商： | STD4NB25 |
STD4NB25
N - CHANNEL 250V - 0.95
- 4A - DPAK
PowerMESH
MOSFET
I
TYPICAL R
DS(on)
=0.95
I
EXTREMELYHIGH dv/dt CAPABILITY
I
100%AVALANCHE TESTED
I
VERY LOW INTRINSIC CAPACITANCES
I
GATE CHARGE MINIMIZED
I
FOR TROUGH-HOLE VERSION CONTACT
SALESOFFICE
DESCRIPTION
Using the latest high voltage MESH OVERLAY
process, STMicroelectronics has designed an
advanced family
of
power
outstanding performances.
pending strip layout coupled with the Company’s
proprietary edge termination structure, gives the
lowest R
DS(on)
per area, exceptional avalanche
and dv/dt capabilities and unrivalled gate charge
and switching characteristics.
MOSFETs
The
new
with
patent
APPLICATIONS
I
SWITCH MODE POWERSUPPLIES(SMPS)
I
DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWERSUPPLIES AND MOTOR DRIVE
INTERNAL SCHEMATIC DIAGRAM
October 1998
1
3
DPAK
TO-252
(Suffix ”T4”)
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V
DS
V
DGR
Drain-source Voltage (V
GS
= 0)
Drain- gate Voltage (R
GS
= 20 k
)
250
V
250
V
V
GS
I
D
I
D
I
DM
(
)
Gate-source Voltage
Drain Current (continuous) at T
c
= 25
o
C
Drain Current (continuous) at T
c
= 100
o
C
Drain Current (pulsed)
Total Dissipation at T
c
= 25
o
C
Derating Factor
±
30
4
V
A
2.5
A
16
A
P
tot
40
W
0.32
W/
o
C
dv/dt(
1
)
Peak Diode Recovery voltage slope
5.5
V/ns
o
C
T
stg
T
j
Storage Temperature
-65 to 150
Max. Operating Junction Temperature
(
) Pulse width limited by safe operating area
150
o
C
(
1
) I
SD
≤
4A, di/dt
≤
200A/
μ
s, V
DD
≤
V
(BR)DSS
, Tj
≤
T
JMAX
TYPE
V
DSS
R
DS(on)
< 1.1
I
D
STD4NB25
250 V
4 A
1/8
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| STD4NB40-1 | N-CHANNEL 400V - 1.47ohm - 4A DPAK/IPAK PowerMESH⑩ MOSFET |
| STD4NB40 | N-Channel Enhancement Mode PowerMESHTM MOSFET(N溝道增強(qiáng)模式MOSFET) |
| STD4NC50 | N - CHANNEL 500V - 1.3 ohm - 3.7 A TO-251 PowerMESH MOSFET |
| STD4NK50Z-1 | Multiconductor Paired ScTP Patch Cable; Number of Conductors:8; Conductor Size AWG:24; No. Strands x Strand Size:7 x 32; Jacket Material:Polyvinylchloride (PVC); Number of Pairs:4; Conductor Material:Copper |
| STD4NK50 | 10 AMP DPDT MINIATURE POWER RELAY |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| STD4NB25T4 | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 4A I(D) | TO-252AA |
| STD4NB40 | 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:N-CHANNEL 400V - 1.47ohm - 4A DPAK/IPAK PowerMESH⑩ MOSFET |
| STD4NB40-1 | 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:N-CHANNEL 400V - 1.47ohm - 4A DPAK/IPAK PowerMESH⑩ MOSFET |
| STD4NC50 | 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:N - CHANNEL 500V - 1.3 ohm - 3.7 A TO-251 PowerMESH MOSFET |
| STD4NC50_07 | 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:N-CHANNEL 500V - 1.3W - 3.7A DPAK/IPAK PowerMesh⑩II MOSFET |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。