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參數(shù)資料
| 型號： | STE15NA100 |
| 廠商： | 意法半導體 |
| 英文描述： | N-Channel Enhancement Mode Fast Power MOS Transistor(N溝道增強模式功率MOS晶體管) |
| 中文描述： | N溝道增強模式快速功率MOS晶體管（不適用溝道增強模式功率馬鞍山晶體管） |
| 文件頁數(shù)： | 1/5頁 |
| 文件大小： | 79K |
| 代理商： | STE15NA100 |
STE15NA100
N - CHANNEL ENHANCEMENT MODE
FAST POWER MOS TRANSISTOR
PRELIMINARY DATA
I
TYPICAL R
DS(on)
= 0.65
I
HIGH CURRENT POWER MODULE
I
AVALANCHE RUGGED TECHNOLOGY
I
VERY LARGE SOA - LARGE PEAK POWER
CAPABILITY
I
EASY TO MOUNT
I
SAME CURRENT CAPABILITY FOR THE
TWO SOURCE TERMINALS
I
EXTREMELY LOW Rth (Junction to case)
I
VERY LOW INTERNAL PARASITIC
INDUCTANCE
I
ISOLATED PACKAGE UL RECOGNIZED
APPLICATIONS
I
SMPS & UPS
I
MOTOR CONTROL
I
WELDING EQUIPMENT
I
OUTPUT STAGE FOR PWM, ULTRASONIC
CIRCUITS
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V
DS
Drain-source Voltage (V
GS
= 0)
1000
V
V
DGR
V
GS
Drain- gate Voltage (R
GS
= 20 k
)
Gate-source Voltage
Drain Current (continuous) at T
c
= 25
o
C
Drain Current (continuous) at T
c
= 100
o
C
1000
±
30
V
V
I
D
15
A
I
D
9.5
A
I
DM
(
)
Drain Current (pulsed)
Total Dissipation at T
c
= 25
o
C
60
A
P
tot
300
W
Derating Factor
2.4
W/
o
C
o
C
o
C
T
stg
T
j
Storage Temperature
-55 to 150
Max. Operating Junction Temperature
150
V
ISO
Insulation Withhstand Voltage (AC-RMS)
(
) Pulse width limited by safe operating area
2500
V
TYPE
V
DSS
R
DS(on)
< 0.77
I
D
STE15NA100
1000 V
15 A
February 1998
ISOTOP
1/5
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