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參數(shù)資料
| 型號(hào)： | STE250N06 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN ISOTOP PACKAGE |
| 中文描述： | ? -通道增強(qiáng)型功率MOS器件中的ISOTOP封裝 |
| 文件頁(yè)數(shù)： | 1/8頁(yè) |
| 文件大小： | 297K |
| 代理商： | STE250N06 |
1/8
September 2001
.
STE250NS10
N-CHANNEL 100V - 0.0045
- 220A ISOTOP
STripFET POWER MOSFET
I
TYPICAL R
DS
(on) = 0.0045
I
STANDARD THRESHOLD DRIVE
I
100% AVALANCHE TESTED
APPLICATIONS
I
SMPS & UPS
I
MOTOR CONTROL
I
WELDING EQUIPMENT
I
OUTPUT STAGE FOR PWM, ULTRASONIC
CIRCUITS
TYPE
V
DSS
R
DS(on)
I
D
STE250NS10
100 V
<0.0055
220A
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
Drain-source Voltage (V
GS
= 0)
V
DGR
Drain-gate Voltage (R
GS
= 20 k
)
V
GS
Gate- source Voltage
I
D
Drain Current (continuos) at T
C
= 25°C
I
D
Drain Current (continuos) at T
C
= 100°C
I
DM
(
)
Drain Current (pulsed)
P
tot
Total Dissipation at T
C
= 25°C
Derating Factor
dv/dt
(1)
Peak Diode Recovery voltage slope
V
ISO
Insulation Withstand Voltage (AC-RMS)
T
stg
Storage Temperature
T
j
Operating Junction Temperature
(
)
Pulse width limited by safe operating area.
(1 )I
SD
≤
220A, di/dt
≤
200A/μs, V
DD
≤
V
(BR)DSS
, T
j
≤
T
JMAX
.
Parameter
Value
100
100
± 20
220
156
880
500
4
3.5
2500
-55 to 150
150
Unit
V
V
V
A
A
A
W
W/°C
V/ns
V
°C
°C
ISOTOP
INTERNAL SCHEMATIC DIAGRAM
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| STE250NS10 | 功能描述:MOSFET N-Ch 100 Volt 220 A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STE250NS10 | 制造商:STMicroelectronics 功能描述:MOSFET |
| STE250NS10_06 | 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:N-channel 100V - 0.0045ヘ - 220A - ISOTOP STripFET⑩ Power MOSFET |
| STE250S | 制造商:Thomas & Betts 功能描述:STAR TECK EXTREME 2 1/2 STEEL |
| STE26N50 | 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN ISOTOP PACKAGE |
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