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參數資料
| 型號： | STE40NC60 |
| 廠商： | 意法半導體 |
| 英文描述： | N-CHANNEL 600V - 0.098ohm - 40A ISOTOP PowerMesh⑩II MOSFET |
| 中文描述： | N溝道600V的- 0.098ohm - 40A條1000V的集電極PowerMesh第二MOSFET的⑩ |
| 文件頁數： | 1/8頁 |
| 文件大小： | 270K |
| 代理商： | STE40NC60 |
1/8
May 2002
STE40NC60
N-CHANNEL 600V - 0.098
- 40A ISOTOP
PowerMeshII MOSFET
n
TYPICAL R
DS
(on) = 0.098
n
EXTREMELY HIGH dv/dt CAPABILITY
n
100% AVALANCHE TESTED
n
NEW HIGH VOLTAGE BENCHMARK
n
GATE CHARGE MINIMIZED
DESCRIPTION
The PowerMESH
II is
the evolution of the first
generation of MESH OVERLAY
.
The layout re-
finements introduced greatly improve the Ron*area
figure of merit while keeping the device at the lead-
ing edge for what concerns swithing speed, gate
charge and ruggedness.
APPLICATIONS
n
HIGH CURRENT, HIGH SPEED SWITCHING
n
SWITH MODE POWER SUPPLIES (SMPS)
n
DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVER
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
Drain-source Voltage (V
GS
= 0)
V
DGR
Drain-gate Voltage (R
GS
= 20 k
)
V
GS
Gate- source Voltage
I
D
Drain Current (continuos) at T
C
= 25°C
I
D
Drain Current (continuos) at T
C
= 100°C
I
DM
(
l
)
Drain Current (pulsed)
P
TOT
Total Dissipation at T
C
= 25°C
Derating Factor
dv/dt (1)
Peak Diode Recovery voltage slope
V
ISO
Insulation Winthstand Voltage (AC-RMS)
T
stg
Storage Temperature
T
j
Max. Operating Junction Temperature
()Pulse width limited by safe operating area
TYPE
V
DSS
R
DS(on)
I
D
STE40NC60
600V
< 0.13
40 A
Parameter
Value
Unit
600
V
600
V
±30
V
40
A
23
A
160
A
460
W
3.68
3
W/°C
V/ns
2500
V
–65 to 150
°C
150
°C
(1) I
SD
≤
40A, di/dt
≤
100 A/
μ
s, V
DD
≤
24V, Tj
≤
T
jMAX
ISOTOP
INTERNAL SCHEMATIC DIAGRAM
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相關代理商/技術參數 |
參數描述 |
|---|---|
| STE40NK90ZD | 功能描述:MOSFET N-Ch 900 Volt 40 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STE40NK90ZD_06 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-channel 900V - 0.14ヘ - 40A ISOTOP Super FREDmesh⑩ MOSFET |
| STE4-420 | 制造商:Carlo Gavazzi 功能描述: |
| STE45N50 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 500V V(BR)DSS | 45A I(D) |
| STE45NK80ZD | 功能描述:MOSFET N-Ch 800 Volt 45 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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