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參數資料
| 型號： | STE48NM50 |
| 廠商： | 意法半導體 |
| 英文描述： | CAP 120PF 50V CERAMIC MONO 5% |
| 中文描述： | N溝道500V - 0.08ohm - 48A條⑩1000V的集電極的MDmesh功率MOSFET |
| 文件頁數： | 1/8頁 |
| 文件大小： | 273K |
| 代理商： | STE48NM50 |
1/8
September 2002
STE48NM50
N-CHANNEL 500V - 0.08
- 48A ISOTOP
MDmeshPower MOSFET
n
TYPICAL R
DS
(on) = 0.08
n
HIGH dv/dt AND AVALANCHE CAPABILITIES
n
100% AVALANCHE TESTED
n
LOW INPUT CAPACITANCE AND GATE
CHARGE
n
LOW GATE INPUT RESISTANCE
n
TIGHT PROCESS CONTROL AND HIGH
MANUFACTURING YIELDS
DESCRIPTION
The MDmesh
is a new revolutionary MOSFET
technology that associates the Multiple Drain pro-
cess with the Company’s PowerMESH horizontal
layout. The resulting product has an outstanding low
on-resistance, impressively high dv/dt and excellent
avalanche characteristics. The adoption of the
Company’s proprietary strip technique yields overall
dynamic performance that is significantly better than
that of similar competition’s products.
APPLICATIONS
The MDmesh family is very suitable for increasing
power density of high voltage converters allowing
system miniaturization and higher efficiencies.
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
Drain-source Voltage (V
GS
= 0)
V
DGR
Drain-gate Voltage (R
GS
= 20 k
)
V
GS
Gate- source Voltage
I
D
Drain Current (continuous) at T
C
= 25°C
I
D
Drain Current (continuous) at T
C
= 100°C
I
DM
(
l
)
Drain Current (pulsed)
P
TOT
Total Dissipation at T
C
= 25°C
Derating Factor
dv/dt (1)
Peak Diode Recovery voltage slope
T
stg
Storage Temperature
T
j
Max. Operating Junction Temperature
()Pulse width limited by safe operating area
TYPE
V
DSS
R
DS(on)
I
D
STE48NM50
500V
< 0.1
48 A
Parameter
Value
Unit
500
V
500
V
±30
V
48
A
30
A
192
A
450
W
3.6
15
W/°C
V/ns
–65 to 150
°C
150
°C
(1) I
SD
≤
48A, di/dt
≤
4
00A/μs, V
DD
≤
V
(BR)DSS
, T
j
≤
T
JMAX.
ISOTOP
INTERNAL SCHEMATIC DIAGRAM
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相關代理商/技術參數 |
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