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參數資料
| 型號： | STE180NE10 |
| 廠商： | 意法半導體 |
| 英文描述： | N-CHANNEL 100V - 4.5 mohm - 180A ISOTOP STripFET] POWER MOSFET |
| 中文描述： | N溝道100V的- 4.5毫歐- 180A 1000V的集電極STripFET]功率MOSFET |
| 文件頁數： | 1/8頁 |
| 文件大小： | 85K |
| 代理商： | STE180NE10 |
STE180N10
N - CHANNEL 100V - 5.5 m
- 180A - ISOTOP
POWER MOSFET
I
TYPICAL R
DS(on)
= 5.5 m
I
100%AVALANCHE TESTED
I
LOW INTRINSIC CAPACITANCE
I
GATE CHARGE MINIMIZED
I
REDUCED VOLTAGESPREAD
INDUSTRIAL APPLICATIONS:
I
SMPS& UPS
I
MOTOR CONTROL
I
WELDING EQUIPMENT
I
OUTPUT STAGE FOR PWM, ULTRASONIC
CIRCUITS
INTERNAL SCHEMATIC DIAGRAM
February 1999
TYPE
V
DSS
R
DS(on)
< 7 m
I
D
STE180N10
100 V
180 A
ISOTOP
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V
DS
V
DGR
V
GS
I
D
Drain-source Voltage (V
GS
= 0)
Drain- gate Voltage (R
GS
= 20 k
)
Gate-source Voltage
Drain Current (continuous) at T
c
= 25
o
C
Drain Current (continuous) at T
c
= 100
o
C
100
V
100
V
±
20
180
V
A
I
D
119
A
I
DM
(
)
P
tot
Drain Current (pulsed)
Total Dissipation at T
c
= 25
o
C
Derating Factor
540
A
450
W
3.6
W/
o
C
V
ISO
Insulation Withstand Voltage (AC-RMS)
2500
V
o
C
o
C
T
stg
T
j
Storage Temperature
-55 to 150
Max. Operating Junction Temperature
(
) Pulse width limited by safe operating area
150
(
1
) I
SD
≤
180
Α,
di/d
τ
≤
200 A/
μ
s, V
DD
≤
V
(BR)DSS
, T
j
≤
T
JMAX
1/8
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相關代理商/技術參數 |
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|---|---|
| STE180NE10 | 制造商:STMicroelectronics 功能描述:MOSFET N SOT-227B |
| STE180NE10_07 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-channel 100V - 4.5mヘ - 180A - ISOTOP STripFET⑩ Power MOSFET |
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