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參數資料
| 型號： | STGD3NB60H |
| 廠商： | 意法半導體 |
| 英文描述： | N-CHANNEL 3A - 600V TO-252 PowerMESH IGBT |
| 中文描述： | N溝道3A條- 600V到- 252 PowerMESH IGBT的 |
| 文件頁數： | 1/8頁 |
| 文件大小： | 86K |
| 代理商： | STGD3NB60H |
STGD3NB60H
N-CHANNEL 3A - 600V TO-252
PowerMESH
IGBT
I
HIGH INPUT IMPEDANCE
(VOLTAGEDRIVEN)
I
LOW ON-VOLTAGEDROP (V
cesat
)
I
LOW GATE CHARGE
I
HIGH CURRENT CAPABILITY
I
VERY HIGH FREQUENCY OPERATION
I
OFFLOSSES INCLUDE TAIL CURRENT
I
SURFACE-MOUNTING DPAK (TO-252)
POWERPACKAGEIN TAPE& REEL
(SUFFIX ”T4”)
DESCRIPTION
Using the latest high voltage technology based
on a patented strip layout, STMicroelectronics
has designed an advanced family of IGBTs, the
PowerMESH
IGBTs,
perfomances. The suffix ”H” identifies a family
optimized to achieve very low switching times for
high frequencyapplications(<120kHz).
with
outstanding
APPLICATIONS
I
HIGH FREQUENCY MOTOR CONTROLS
I
SMPSAND PFC IN BOTH HARDSWITCH
AND RESONANTTOPOLOGIES
INTERNAL SCHEMATIC DIAGRAM
June 1999
1
3
DPAK
TO-252
(Suffix ”T4”)
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V
CES
V
ECR
V
GE
I
C
Collector-Emitter Voltage (V
GS
= 0)
Emitter-Collector Voltage
600
V
20
V
Gate-Emitter Voltage
Collector Current (continuous) at T
c
= 25
o
C
Collector Current (continuous) at T
c
= 100
o
C
±
20
6
V
A
I
C
3
A
I
CM
(
)
P
tot
Collector Current (pulsed)
Total Dissipation at T
c
= 25
o
C
Derating Factor
24
A
35
W
0.28
W/
o
C
o
C
o
C
T
stg
Storage Temperature
-65 to 150
T
j
Max. Operating Junction Temperature
(
) Pulse width limited by safe operating area
150
TYPE
V
CES
V
CE(sat)
I
C
3 A
STGD3NB60H
600 V
< 2.8 V
1/8
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| STGE200NB60S | N-CHANNEL 150A - 600V - ISOTOP PowerMESH⑩ IGBT |
| STGE50NB60HD | N-CHANNEL 50A - 600V ISOTOP PowerMESH IGBT |
| STGF10NB60SD | N-CHANNEL 10A - 600V TO-220FP PowerMESH? IGBT |
| STGP14NC60KD | Suppressors, Outlet; Suppressor Type:Outlet Strip; Leaded Process Compatible:No; Peak Reflow Compatible (260 C):No RoHS Compliant: No |
相關代理商/技術參數 |
參數描述 |
|---|---|
| STGD3NB60HD | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 6A - 600V - DPAK PowerMESH TM IGBT |
| STGD3NB60HDT4 | 功能描述:IGBT 600V 10A 50W DPAK RoHS:是 類別:分離式半導體產品 >> IGBT - 單路 系列:PowerMESH™ 標準包裝:30 系列:GenX3™ IGBT 類型:PT 電壓 - 集電極發射極擊穿（最大）:1200V Vge, Ic時的最大Vce（開）:3V @ 15V，100A 電流 - 集電極 (Ic)（最大）:200A 功率 - 最大:830W 輸入類型:標準 安裝類型:通孔 封裝/外殼:TO-247-3 供應商設備封裝:PLUS247?-3 包裝:管件 |
| STGD3NB60HT4 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 6A I(C) | TO-252AA |
| STGD3NB60K | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 3A - 600V - TO-220/DPAK/D2PAK PowerMESH⑩ IGBT |
| STGD3NB60KD | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:N-CHANNEL 6A - 600V DPAK SHORT CIRCUIT PROOF POWERMESH IGBT |
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