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參數(shù)資料
| 型號： | STGD7NB60F |
| 廠商： | 意法半導體 |
| 英文描述： | N-CHANNEL 7A - 600V - T0-220 / DPAK PowerMESH IGBT |
| 中文描述： | N溝道第7A - 600V的- T0代- 220 / IGBT的DPAK封裝PowerMESH |
| 文件頁數(shù)： | 1/8頁 |
| 文件大小： | 330K |
| 代理商： | STGD7NB60F |
1/8
PRELIMINARY DATA
June 2003
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.
STGP7NB60F - STGD7NB60F
N-CHANNEL 7A - 600V
- TO-220 / DPAK
PowerMESH IGBT
I
HIGH INPUT IMPEDANCE
I
LOW ON-VOLTAGE DROP (V
cesat
)
I
OFF LOSSES INCLUDE TAIL CURRENT
I
LOW GATE CHARGE
I
HIGH CURRENT CAPABILITY
I
HIGH FREQUENCY OPERATION
I
ADD SUFFIX “T4” FOR ORDERING IN TAPE &
REEL (DPAK)
DESCRIPTION
Using the latest high voltage technology based on a
patented strip layout, STMicroelectronics has de-
signed an advanced family of IGBTs, the Power-
MESH IGBTs, with outstanding perfomances.
The suffix "F" identifies a family optimized to
achieve very low switching switching times for fre-
quency applications (<40KHZ)
APPLICATIONS
I
MOTOR CONTROLS
I
SMPS AND PFC AND BOTH HARD SWITCH
AND RESONANT TOPOLOGIES
ABSOLUTE MAXIMUM RATINGS
Symbol
( ) PULSE WIDTH LIMITED BY SAFE OPERATING AREA
TYPE
V
CES
V
CE(sat) (Max)
@25°C
I
C
@100°C
STGP7NB60F
STGD7NB60F
600 V
600 V
< 2.4
V
< 2.4
V
7 A
7 A
Parameter
Value
Unit
TO-220
DPAK
V
CES
V
GE
I
C
I
C
I
CM
( )
P
TOT
Collector-Emitter Voltage (V
GS
= 0)
600
V
Gate-Emitter Voltage
±20
V
Collector Current (continuous) at T
C
= 25°C
Collector Current (continuous) at T
C
= 100°C
14
A
7
A
Collector Current (pulsed)
56
A
Total Dissipation at T
C
= 25°C
Derating Factor
80
70
W
0.64
0.56
W/°C
T
stg
T
j
Storage Temperature
– 55 to 150
°C
Max. Operating Junction Temperature
150
°C
TO-220
1
2
3
1
3
DPAK
INTERNAL SCHEMATIC DIAGRAM
相關PDF資料 |
PDF描述 |
|---|---|
| STGP7NB60F | N-CHANNEL 7A - 600V - T0-220 / DPAK PowerMESH IGBT |
| STGD7NB60H-1 | N-CHANNEL 7A - 600V IPAK PowerMESH IGBT |
| STGD7NB60HT4 | N-CHANNEL 7A - 600V - DPAK POWERMESH IGBT |
| STGD7NB60H | N-CHANNEL 7A - 600V - DPAK PowerMESH⑩ IGBT |
| STGD7NB60KT4 | Transient Surge Protection Thyristor; Package/Case:DO-214AA; Leaded Process Compatible:No; Peak Reflow Compatible (260 C):No; Reel Quantity:2500; Repetitive Reverse Voltage Max, Vrrm:65V; Capacitance:50pF; Holding Current:150mA |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| STGD7NB60FT4 | 功能描述:IGBT 晶體管 N-Ch 600 Volt 7 Amp RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| STGD7NB60H | 功能描述:IGBT 晶體管 N-Ch 600 Volt 7 Amp RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| STGD7NB60H-1 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 7A - 600V IPAK PowerMESH IGBT |
| STGD7NB60HT4 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 7A - 600V - DPAK POWERMESH IGBT |
| STGD7NB60K | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 7A - 600V - TO-220/FP/DPAK/D2PAK PowerMESH⑩ IGBT |
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