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參數(shù)資料
| 型號： | STGD7NB60HT4 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | N-CHANNEL 7A - 600V - DPAK POWERMESH IGBT |
| 中文描述： | N溝道第7A - 600V的- IGBT的DPAK封裝POWERMESH |
| 文件頁數(shù)： | 1/9頁 |
| 文件大小： | 327K |
| 代理商： | STGD7NB60HT4 |
1/9
July 2000
STGD7NB60H
N-CHANNEL 7A - 600V
- DPAK
PowerMESH IGBT
I
HIGH INPUT IMPEDANCE
I
LOW ON-VOLTAGE DROP (V
cesat
)
I
OFF LOSSES INCLUDE TAIL CURRENT
I
LOW GATE CHARGE
I
HIGH CURRENT CAPABILITY
I
VERY HIGH FREQUENCY OPERATION
I
CO-PACKAGED WITH TURBOSWITCHT
I
TYPICAL SHORT CIRCUIT WITHSTAND TIME
5MICROS S-family, 4 micro H family
I
ANTIPARALLEL DIODE
DESCRIPTION
Using the latest high voltage technology based on a
patented strip layout, STMicroelectronics has de-
signed an advanced family of IGBTs, the Power-
MESH IGBTs, with outstanding perfomances.
The suffix "H" identifies a family optimized for high
frequency applications (up to 50kHz)in order to
achieve very high switching performances (reduced
tfall) mantaining a low voltage drop.
APPLICATIONS
I
HIGH FREQUENCY MOTOR CONTROLS
I
SMPS and PFC IN BOTH HARD SWITCH AND
RESONANT TOPOLOGIES
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CES
Collector-Emitter Voltage (V
GS
= 0)
V
ECR
Emitter-Collector Voltage
V
GE
Gate-Emitter Voltage
I
C
Collector Current (continuos) at T
C
= 25°C
I
C
Collector Current (continuos) at T
C
= 100°C
I
CM
(
I
)
Collector Current (pulsed)
P
TOT
Total Dissipation at T
C
= 25°C
Derating Factor
T
stg
Storage Temperature
T
j
Max. Operating Junction Temperature
TYPE
V
CES
V
CE(sat)
I
C
STD7NB60H
600 V
< 2.8
V
7 A
Parameter
Value
Unit
600
V
20
V
± 20
V
14
A
7
A
56
A
55
W
0.44
W/°C
–65 to 150
°C
150
°C
DPAK
1
3
INTERNAL SCHEMATIC DIAGRAM
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| STGD7NB60H | N-CHANNEL 7A - 600V - DPAK PowerMESH⑩ IGBT |
| STGD7NB60KT4 | Transient Surge Protection Thyristor; Package/Case:DO-214AA; Leaded Process Compatible:No; Peak Reflow Compatible (260 C):No; Reel Quantity:2500; Repetitive Reverse Voltage Max, Vrrm:65V; Capacitance:50pF; Holding Current:150mA |
| STGP7NB60KDFP | CAPACITOR, BESTCAP 45 MILLI FARAD 4.5VCAPACITOR, BESTCAP 45 MILLI FARAD 4.5V; Capacitance:45mF; Voltage rating, DC:4.5V; Capacitor dielectric type:Electronic; Series:BestCap; Temp, op. max:70(degree C); Temp, op. min:-20(degree C); |
| STGD7NB60K | N-CHANNEL 7A - 600V - TO-220/FP/DPAK/D2PAK PowerMESH⑩ IGBT |
| STGP7NB60KFP | N-CHANNEL 7A - 600V - TO-220/FP/DPAK/D2PAK PowerMESH⑩ IGBT |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| STGD7NB60K | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 7A - 600V - TO-220/FP/DPAK/D2PAK PowerMESH⑩ IGBT |
| STGD7NB60K_07 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-channel 600V - 7A - TO-220 / DPAK Short circuit rated PowerMESH TM IGBT |
| STGD7NB60KT4 | 功能描述:IGBT 晶體管 N-Ch 600 Volt 7 Amp RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| STGD7NB60MT4 | 功能描述:IGBT 晶體管 N-Ch 600 Volt 7 Amp RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| STGD7NB60S | 功能描述:IGBT 晶體管 N-Ch 600 Volt 7 Amp RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
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