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參數資料
| 型號： | STGD7NB60K |
| 廠商： | 意法半導體 |
| 英文描述： | N-CHANNEL 7A - 600V - TO-220/FP/DPAK/D2PAK PowerMESH⑩ IGBT |
| 中文描述： | N溝道第7A - 600V的- IGBT的TO-220/FP/DPAK/D2PAK PowerMESH⑩ |
| 文件頁數： | 1/14頁 |
| 文件大小： | 710K |
| 代理商： | STGD7NB60K |
1/14
June 2002
STGP7NB60K-STGP7NB60KFP-STGD7NB60K
STGP7NB60KD-STGP7NB60KDFP-STGB7NB60KD
N-CHANNEL 7A - 600V
- TO-220/FP/DPAK/D
2
PAK
PowerMESH IGBT
I
HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN)
I
LOW ON-VOLTAGE DROP (V
cesat
)
I
LOW GATE CHARGE
I
HIGH CURRENT CAPABILITY
I
OFF LOSSES INCLUDE TAIL CURRENT
I
FREQUENCY OPERATION
I
SHORT CIRCUIT RATED
DESCRIPTION
Using the latest high voltage technology based on a
patented strip layout, STMicroelectronics has de-
signed an advanced family of IGBTs, the Power-
MESH
IGBTs, with outstanding performances.
The suffix “K” identifies a family optimized for high
frequency motor control applications with short cir-
cuit withstand capability.
APPLICATIONS
I
HIGH FREQUENCY MOTOR CONTROLS
I
SMPS AND PFC IN BOTH HARD SWITCHING
AND RESONANT TOPOLOGIES
ORDERING INFORMATION
SALES TYPE
TYPE
V
CES
V
CE(sat)
(Typ) @125°C
I
C
@125°C
STGP7NB60K
STGD7NB60K
STGP7NB60KFP
STGP7NB60KD
STGP7NB60KDFP
STGB7NB60KD
600 V
600 V
600 V
600 V
600 V
600 V
< 2
V
< 2
V
< 2
V
< 2
V
< 2
V
< 2
V
7 A
7 A
7 A
7 A
7 A
7 A
MARKING
PACKAGE
PACKAGING
STGP7NB60K
GP7NB60K
TO-220
TUBE
STGD7NB60KT4
GD7NB60K
DPAK
TAPE & REEL
STGP7NB60KFP
GP7NB60KFP
TO-220FP
TUBE
STGP7NB60KD
GP7NB60KD
TO-220
TUBE
STGP7NB60KDFP
GP7NB60KDFP
TO-220FP
TUBE
STGB7NB60KDT4
GB7NB60KD
D
2
PAK
TAPE & REEL
TO-220
1
2
3
1
3
1
2
3
1
3
TO-220FP
DPAK
D
2
PAK
INTERNAL SCHEMATIC DIAGRAM
Std. Version
“D” Version
相關PDF資料 |
PDF描述 |
|---|---|
| STGP7NB60KFP | N-CHANNEL 7A - 600V - TO-220/FP/DPAK/D2PAK PowerMESH⑩ IGBT |
| STGP7NB60K | N-CHANNEL 7A - 600V - TO-220/FP/DPAK/D2PAK PowerMESH⑩ IGBT |
| STGD7NB60St4 | N-CHANNEL 7A - 600V DPAK Power MESH IGBT |
| STGF20NB60S | N-CHANNEL 13A - 600V TO-220FP PowerMESH IGBT |
| STGP12NB60K | SHORT CIRCUIT PROOF PowerMESH IGBT |
相關代理商/技術參數 |
參數描述 |
|---|---|
| STGD7NB60K_07 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-channel 600V - 7A - TO-220 / DPAK Short circuit rated PowerMESH TM IGBT |
| STGD7NB60KT4 | 功能描述:IGBT 晶體管 N-Ch 600 Volt 7 Amp RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| STGD7NB60MT4 | 功能描述:IGBT 晶體管 N-Ch 600 Volt 7 Amp RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| STGD7NB60S | 功能描述:IGBT 晶體管 N-Ch 600 Volt 7 Amp RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| STGD7NB60ST4 | 功能描述:IGBT 晶體管 N-Ch 600 Volt 7 Amp RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
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