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參數資料
| 型號： | STGD7NB60St4 |
| 廠商： | 意法半導體 |
| 英文描述： | N-CHANNEL 7A - 600V DPAK Power MESH IGBT |
| 中文描述： | N溝道第7A - 600V的IGBT的DPAK封裝電力網格 |
| 文件頁數： | 1/8頁 |
| 文件大小： | 289K |
| 代理商： | STGD7NB60ST4 |
STGD7NB60S
N-CHANNEL 7A - 600V DPAK
Power MESH
IGBT
I
HIGH INPUT IMPEDANCE
(VOLTAGE DRIVEN)
I
VERY LOW ON-VOLTAGE DROP (V
cesat
)
I
HIGH CURRENT CAPABILITY
I
OFF LOSSES INCLUDE TAIL CURRENT
I
SURFACE-MOUNTING DPAK (TO-252)
POWER PACKAGE IN TAPE & REEL
(SUFFIX "T4")
DESCRIPTION
Using the latest high voltage technology based
on a patented strip layout, STMicroelectronics
has designed an advanced family of IGBTs, the
PowerMESH
IGBTs,
perfomances. The suffix "S" identifies a family
optimized to achieve minimum on-voltage drop
for low frequency applications (<1kHz).
with
outstanding
APPLICATIONS
I
LIGHT DIMMER
I
STATIC RELAYS
I
MOTOR CONTROL
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V
CES
V
ECR
V
GE
I
C
Collector-Emitter Voltage (V
GS
= 0)
Reverse Battery Protection
600
V
20
±
20
15
V
Gate-Emitter Voltage
Collector Current (continuous) at T
c
= 25
o
C
Collector Current (continuous) at T
c
= 100
o
C
V
A
I
C
7
A
I
CM
(
)
P
tot
Collector Current (pulsed)
Total Dissipation at T
c
= 25
o
C
Derating Factor
60
A
55
W
0.44
W/
o
C
o
C
o
C
T
stg
Storage Temperature
-65 to 150
T
j
Max. Operating Junction Temperature
(
) Pulse width limited by safe operating area
150
TYPE
V
CES
600 V
V
CE(sat)
< 1.6 V
I
C
7 A
STGD7NB60S
November 1999
1
3
DPAK
TO-252
(Suffix "T4")
1/8
相關PDF資料 |
PDF描述 |
|---|---|
| STGF20NB60S | N-CHANNEL 13A - 600V TO-220FP PowerMESH IGBT |
| STGP12NB60K | SHORT CIRCUIT PROOF PowerMESH IGBT |
| STGP7NB60HDFP | N-Channel 7A-600V- TO-220/FP PowerMESH IGBT(N溝道絕緣柵雙極晶體管) |
| STGW40NC60V | N-CHANNEL 50A - 600V TO-247 Hyper Fast PowerMESH⑩ IGBT |
| STGY40NC60V | Niobium Oxide Capacitor; Capacitor Type:Solid; Voltage Rating:6.3VDC; Capacitor Dielectric Material:Niobium Oxide; Capacitance:220uF; Capacitance Tolerance:+/- 20%; ESR:0.4ohm; Operating Temp. Max:105 C; Operating Temp. Min:-55 C RoHS Compliant: Yes |
相關代理商/技術參數 |
參數描述 |
|---|---|
| STGD7NC60H | 制造商:STMicroelectronics 功能描述:Transistor IGBT N-Ch 600V 25A DPAK |
| STGD7NC60HT4 | 功能描述:IGBT 晶體管 N-Ch 600 Volt 14 Amp RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| STGD8NC60K | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-channel 600V - 8A - D2PAK / DPAK / TO-220 Short circuit rated PowerMESH IGBT |
| STGD8NC60KD | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:600 V - 8 A - short circuit rugged IGBT |
| STGD8NC60KDT4 | 功能描述:IGBT 晶體管 N Ch 55V 6.5mohm 80A Pwr MOSFET RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
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