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參數(shù)資料
| 型號(hào)： | STGP12NB60K |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | SHORT CIRCUIT PROOF PowerMESH IGBT |
| 中文描述： | 短路IGBT的證明PowerMESH |
| 文件頁數(shù)： | 1/9頁 |
| 文件大小： | 322K |
| 代理商： | STGP12NB60K |
1/9
December 2003
STGP12NB60K
N-CHANNEL 18A - 600V
TO-220
SHORT CIRCUIT PROOF PowerMESH IGBT
I
HIGH INPUT IMPEDANCE
I
LOW ON-LOSSES
I
LOW GATE CHARGE
I
HIGH CURRENT CAPABILITY
I
OFF LOSSES INCLUDE TAIL CURRENT
I
VERY HIGH FREQUENCY OPERATION
I
TYPICAL SHORT CIRCUIT WITHSTAND TIME 10
MICROS
DESCRIPTION
Using the latest high voltage technology based on a
patented strip layout, STMicroelectronics has de-
signed an advanced family of IGBTs, the Power-
MESH
IGBTs, with outstanding performances. The
suffix “K” identifies a family optimized for high frequen-
cy applications (up to 50kHz) and short circuit proof in
order to achieve very high switching performances (re-
duced tfall) mantaining a low voltage drop.
APPLICATIONS
I
HIGH FREQUENCY MOTOR CONTROLS
I
SMPS
I
UPS
ORDERING INFORMATION
SALES TYPE
TYPE
V
CES
V
CE(sat)
(Max) @25°C
I
C
(#)
@ 100°C
STGP12NB60K
600 V
< 2.8
V
18 A
MARKING
PACKAGE
PACKAGING
STGP12NB60K
GP12NB60K
TO-220
TUBE
TO-220
1
2
3
INTERNAL SCHEMATIC DIAGRAM
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| STGP7NB60HDFP | N-Channel 7A-600V- TO-220/FP PowerMESH IGBT(N溝道絕緣柵雙極晶體管) |
| STGW40NC60V | N-CHANNEL 50A - 600V TO-247 Hyper Fast PowerMESH⑩ IGBT |
| STGY40NC60V | Niobium Oxide Capacitor; Capacitor Type:Solid; Voltage Rating:6.3VDC; Capacitor Dielectric Material:Niobium Oxide; Capacitance:220uF; Capacitance Tolerance:+/- 20%; ESR:0.4ohm; Operating Temp. Max:105 C; Operating Temp. Min:-55 C RoHS Compliant: Yes |
| STGY40NC60VD | N-CHANNEL 50A - 600V - Max247 Very Fast PowerMESH?? IGBT |
| STH12NA60 | Supercapacitor; Capacitance:0.47F; Series:EDL; Voltage Rating:5.5VDC; Capacitor Dielectric Material:Carbon Aerogel Foam; Package/Case:Stacked Coin; Termination:Radial Leaded; ESR:30ohm; Lead Pitch:5mm; Operating Temp. Max:70 C RoHS Compliant: Yes |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| STGP12NB60KD | 功能描述:IGBT 晶體管 N-Ch 600 Volt 18 Amp RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| STGP14N60D | 功能描述:IGBT 晶體管 14A 600V SHRT CIR RUGGED IGBT RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| STGP14NC60KD | 功能描述:IGBT 晶體管 PowerMESH" IGBT RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| STGP15H60DF | 制造商:STMicroelectronics 功能描述:Trench gate field-stop IGBT, H series 600 V, 15 A high speed |
| STGP15M65DF2 | 功能描述:TRENCH GATE FIELD-STOP IGBT M SE 制造商:stmicroelectronics 系列:- 包裝:管件 零件狀態(tài):有效 IGBT 類型:溝槽型場(chǎng)截止 電壓 - 集射極擊穿（最大值）:650V 電流 - 集電極（Ic）（最大值）:30A 脈沖電流 - 集電極 (Icm):60A 不同?Vge，Ic 時(shí)的?Vce（on）:2V @ 15V，15A 功率 - 最大值:136W 開關(guān)能量:90μJ（開），450μJ（關(guān)） 輸入類型:標(biāo)準(zhǔn) 柵極電荷:45nC 25°C 時(shí) Td（開/關(guān)）值:24ns/93ns 測(cè)試條件:400V，15A，12 歐姆，15V 反向恢復(fù)時(shí)間（trr）:142ns 封裝/外殼:TO-220-3 安裝類型:通孔 供應(yīng)商器件封裝:TO-220 標(biāo)準(zhǔn)包裝:50 |
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