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參數資料
| 型號： | STGD7NB60H-1 |
| 廠商： | 意法半導體 |
| 英文描述： | N-CHANNEL 7A - 600V IPAK PowerMESH IGBT |
| 中文描述： | N溝道第7A - 600V的IGBT的像是iPak PowerMESH |
| 文件頁數： | 1/8頁 |
| 文件大小： | 86K |
| 代理商： | STGD7NB60H-1 |
STGD7NB60H-1
N-CHANNEL 7A - 600V IPAK
PowerMESH
IGBT
I
HIGH INPUT IMPEDANCE
(VOLTAGEDRIVEN)
I
LOW ON-VOLTAGEDROP (V
cesat
)
I
LOW GATE CHARGE
I
HIGH CURRENT CAPABILITY
I
VERY HIGH FREQUENCY OPERATION
I
OFFLOSSES INCLUDE TAIL CURRENT
I
THROUGH-HOLE IPAK (TO-251) POWER
PACKAGEIN TUBE(SUFFIX”-1”)
DESCRIPTION
Using the latest high voltage technology based
on a patented strip layout, STMicroelectronics
has designed an advanced family of IGBTs, the
PowerMESH
IGBTs,
perfomances. The suffix ”H” identifies a family
optimized to achieve very low switching times for
high frequencyapplications(<120kHz).
with
outstanding
APPLICATIONS
I
HIGH FREQUENCY MOTOR CONTROLS
I
SMPSAND PFC IN BOTH HARDSWITCH
AND RESONANTTOPOLOGIES
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V
CES
V
ECR
V
GE
I
C
Collector-Emitter Voltage (V
GS
= 0)
Emitter-Collector Voltage
600
V
20
V
Gate-Emitter Voltage
Collector Current (continuous) at T
c
= 25
o
C
Collector Current (continuous) at T
c
= 100
o
C
±
20
14
V
A
I
C
7
A
I
CM
(
)
P
tot
Collector Current (pulsed)
Total Dissipation at T
c
= 25
o
C
Derating Factor
56
A
55
W
0.44
W/
o
C
o
C
o
C
T
stg
Storage Temperature
-65 to 150
T
j
Max. Operating Junction Temperature
(
) Pulse width limited by safe operating area
150
TYPE
V
CES
V
CE(sat)
I
C
7 A
STGD7NB60H-1
600 V
< 2.8 V
June 1999
3
2
1
IPAK
TO-251
(Suffix ”-1”)
1/8
相關PDF資料 |
PDF描述 |
|---|---|
| STGD7NB60HT4 | N-CHANNEL 7A - 600V - DPAK POWERMESH IGBT |
| STGD7NB60H | N-CHANNEL 7A - 600V - DPAK PowerMESH⑩ IGBT |
| STGD7NB60KT4 | Transient Surge Protection Thyristor; Package/Case:DO-214AA; Leaded Process Compatible:No; Peak Reflow Compatible (260 C):No; Reel Quantity:2500; Repetitive Reverse Voltage Max, Vrrm:65V; Capacitance:50pF; Holding Current:150mA |
| STGP7NB60KDFP | CAPACITOR, BESTCAP 45 MILLI FARAD 4.5VCAPACITOR, BESTCAP 45 MILLI FARAD 4.5V; Capacitance:45mF; Voltage rating, DC:4.5V; Capacitor dielectric type:Electronic; Series:BestCap; Temp, op. max:70(degree C); Temp, op. min:-20(degree C); |
| STGD7NB60K | N-CHANNEL 7A - 600V - TO-220/FP/DPAK/D2PAK PowerMESH⑩ IGBT |
相關代理商/技術參數 |
參數描述 |
|---|---|
| STGD7NB60HT4 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 7A - 600V - DPAK POWERMESH IGBT |
| STGD7NB60K | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 7A - 600V - TO-220/FP/DPAK/D2PAK PowerMESH⑩ IGBT |
| STGD7NB60K_07 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-channel 600V - 7A - TO-220 / DPAK Short circuit rated PowerMESH TM IGBT |
| STGD7NB60KT4 | 功能描述:IGBT 晶體管 N-Ch 600 Volt 7 Amp RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| STGD7NB60MT4 | 功能描述:IGBT 晶體管 N-Ch 600 Volt 7 Amp RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
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