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參數資料
| 型號： | STGW20NB60KD |
| 廠商： | 意法半導體 |
| 英文描述： | N-CHANNEL 20A - 600V - TO-247 SHORT CIRCUIT PROOF PowerMESH? IGBT |
| 中文描述： | N溝道20A條- 600V的-到247短路證明PowerMESH？ IGBT的 |
| 文件頁數： | 1/8頁 |
| 文件大小： | 90K |
| 代理商： | STGW20NB60KD |
STGW20NB60HD
N-CHANNEL 20A - 600V TO-247
PowerMESH
IGBT
I
HIGH INPUT IMPEDANCE
(VOLTAGEDRIVEN)
I
LOW ON-VOLTAGEDROP (V
CESAT
)
I
LOW GATE CHARGE
I
HIGH CURRENT CAPABILITY
I
VERY HIGH FREQUENCY OPERATION
I
OFFLOSSES INCLUDE TAIL CURRENT
I
CO-PACKAGEDWITH TURBOSWITCH
ANTIPARALLELDIODE
DESCRIPTION
Using the latest high voltage technology based
on a patented strip layout, STMicroelectronics
has designed an advanced family of IGBTs, the
PowerMESH
IGBTs,
perfomances. The suffix ”H” identifies a family
optimized to achieve very low switching times for
high frequencyapplications(<120kHz).
with
outstanding
APPLICATIONS
I
HIGH FREQUENCY MOTOR CONTROLS
I
WELDING EQUIPMENTS
I
SMPSAND PFC IN BOTH HARDSWITCH
AND RESONANTTOPOLOGIES
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V
CES
V
GE
I
C
I
C
I
CM
(
)
P
tot
Collector-Emitter Voltage (V
GS
= 0)
Gate-Emitter Voltage
Collector Current (continuous) at T
c
= 25
o
C
Collector Current (continuous) at T
c
= 100
o
C
600
±
20
40
V
V
A
20
A
Collector Current (pulsed)
Total Dissipation at T
c
= 25
o
C
Derating Factor
160
A
150
W
1.2
W/
o
C
T
stg
Storage Temperature
-65 to 150
o
C
o
C
T
j
Max. Operating Junction Temperature
(
) Pulse width limited by safe operating area
150
TYPE
V
CES
V
CE(sat)
I
C
STGW20NB60HD
600 V
< 2.8 V
20 A
June 1999
1
23
TO-247
1/8
相關PDF資料 |
PDF描述 |
|---|---|
| STGW20NB60H | N-CHANNEL 20A - 600V TO-247 PowerMESH IGBT |
| STGW20NB60K | N-CHANNEL 20A - 600V - TO-247 SHORT CIRCUIT PROOF PowerMESH⑩ IGBT |
| STGW30NB60HD | N-CHANNEL 30A - 600V TO-247 PowerMESH IGBT |
| STGW50NB60H | N-CHANNEL 50A - 600V TO-247 PowerMESH IGBT |
| STGW50NB60M | N-CHANNEL 50A - 600V - TO-247 PowerMESH⑩ IGBT |
相關代理商/技術參數 |
參數描述 |
|---|---|
| STGW20NC60V | 功能描述:IGBT 晶體管 N-Ch 600 Volt 30 Amp RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| STGW20NC60VD | 功能描述:IGBT 晶體管 N-Ch 600 Volt 30 Amp RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| STGW20V60DF | 功能描述:IGBT 晶體管 600V 20A High Speed Trench Gate IGBT RoHS:否 制造商:STMicroelectronics 配置:Single 集電極—發射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:+/- 20 V 在25 C的連續集電極電流:40 A 柵極—射極漏泄電流:250 nA 功率耗散:167 W 最大工作溫度:+ 175 C 封裝 / 箱體:TO-247 封裝:Tube |
| STGW20V60F | 制造商:STMicroelectronics 功能描述:IGBT & POWER BIPOLAR - Rail/Tube |
| STGW25H120DF | 制造商:STMicroelectronics 功能描述:HIGH SPEED 25 A, 1200 V, TRENCH GATE FIELD STOP IGBT - Bulk |
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