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參數資料
| 型號： | STGW30NB60HD |
| 廠商： | 意法半導體 |
| 英文描述： | N-CHANNEL 30A - 600V TO-247 PowerMESH IGBT |
| 中文描述： | N溝道30A條- 600V到- 247 PowerMESH IGBT的 |
| 文件頁數： | 1/8頁 |
| 文件大小： | 91K |
| 代理商： | STGW30NB60HD |
STGW30NB60HD
N-CHANNEL 30A - 600V TO-247
PowerMESH
IGBT
I
HIGH INPUT IMPEDANCE
(VOLTAGEDRIVEN)
I
LOW ON-VOLTAGEDROP (V
CESAT
)
I
LOW GATE CHARGE
I
HIGH CURRENT CAPABILITY
I
VERY HIGH FREQUENCY OPERATION
I
OFFLOSSES INCLUDE TAIL CURRENT
I
CO-PACKAGEWITH TURBOSWITCH
ANTIPARALLELDIODE
DESCRIPTION
Using the latest high voltage technology based
on a patented strip layout, STMicroelectronics
has designed an advanced family of IGBTs, the
PowerMESH
IGBTs,
perfomances. The suffix ”H” identifies a family
optimized to achieve very low switching times for
high frequencyapplications(<120kHz).
with
outstanding
APPLICATIONS
I
HIGH FREQUENCY MOTOR CONTROLS
I
WELDING EQUIPMENTS
I
SMPSAND PFC IN BOTH HARDSWITCH
AND RESONANTTOPOLOGIES
INTERNAL SCHEMATIC DIAGRAM
July 1999
1
23
TO-247
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V
CES
V
ECR
V
GE
I
C
Collector-Emitter Voltage (V
GS
= 0)
Emitter-Collector Voltage
600
V
20
V
Gate-Emitter Voltage
Collector Current (continuous) at T
c
= 25
o
C
Collector Current (continuous) at T
c
= 100
o
C
±
20
60
V
A
I
C
30
A
I
CM
(
)
P
tot
Collector Current (pulsed)
Total Dissipation at T
c
= 25
o
C
Derating Factor
240
A
190
W
1.52
W/
o
C
o
C
o
C
T
stg
Storage Temperature
-65 to 150
T
j
Max. Operating Junction Temperature
(
) Pulse width limited by safe operating area
150
TYPE
V
CES
V
CE(sat)
I
C
STGW30NB60HD
600 V
< 2.8 V
30 A
1/8
相關PDF資料 |
PDF描述 |
|---|---|
| STGW50NB60H | N-CHANNEL 50A - 600V TO-247 PowerMESH IGBT |
| STGW50NB60M | N-CHANNEL 50A - 600V - TO-247 PowerMESH⑩ IGBT |
| STGY50NB60 | N-CHANNEL 50A - 600V MAX247 PowerMESH IGBT |
| STGY50NB60HD | N-CHANNEL 50A - 600V MAX247 PowerMESH IGBT |
| STH4N90 | N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR |
相關代理商/技術參數 |
參數描述 |
|---|---|
| STGW30NC120HD | 功能描述:IGBT 晶體管 N-CHANNEL IGBT RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| STGW30NC120HD_07 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-channel 1200V - 30A - TO-247 Very fast PowerMESH TM IGBT |
| STGW30NC120HD_0710 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-channel 1200V - 30A - TO-247 very fast PowerMESH IGBT |
| STGW30NC60KD | 功能描述:IGBT 晶體管 30A 600v IGBT RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| STGW30NC60VD | 功能描述:IGBT 晶體管 PowerMESH RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發射極最大電壓:20 V 在25 C的連續集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
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