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參數(shù)資料
| 型號： | STN2NF10 |
| 廠商： | 意法半導體 |
| 英文描述： | N-CHANNEL 100V - 0.23ohm - 2A SOT-223 STripFET⑩ II POWER MOSFET |
| 中文描述： | N溝道100V的- 0.23ohm -甲的SOT - 223 STripFET⑩二功率MOSFET |
| 文件頁數(shù)： | 1/8頁 |
| 文件大小： | 259K |
| 代理商： | STN2NF10 |
1/8
December 2001
.
STN2NF10
N-CHANNEL 100V - 0.23
- 2A SOT-223
STripFET II POWER MOSFET
I
TYPICAL R
DS
(on) = 0.23
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size"
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a remark-
able manufacturing reproducibility.
APPLICATIONS
I
DC-DC & DC-AC COVERTERS
I
DC MOTOR CONTROL (DISK DRIVERS, etc.)
I
SYNCHRONOUS RECTIFICATION
TYPE
V
DSS
R
DS(on)
I
D
STN2NF10
100 V
< 0.26
2 A
1
2
2
3
SOT-223
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
Drain-source Voltage (V
GS
= 0)
V
DGR
Drain-gate Voltage (R
GS
= 20 k
)
V
GS
Gate- source Voltage
I
D
(
)
Drain Current (continuos) at T
C
= 25°C
I
D
Drain Current (continuos) at T
C
= 100°C
I
DM
(
)
Drain Current (pulsed)
P
tot
Total Dissipation at T
C
= 25°C
Derating Factor
E
AS
(1)
Single Pulse Avalanche Energy
T
stg
Storage Temperature
T
j
Max. Operating Junction Temperature
(
)
Pulse width limited by safe operating area.
(
)
Current limited by the package
(1) I
SD
≤
1A, di/dt
≤
300A/μs, V
DD
≤
V
(BR)DSS
, T
j
≤
T
JMAX
Parameter
Value
100
100
± 20
2
1.26
8
2.5
0.02
300
-65 to 150
150
Unit
V
V
V
A
A
A
W
W/°C
mJ
°C
°C
INTERNAL SCHEMATIC DIAGRAM
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| STN2NF10_07 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-channel 100V - 0.23ヘ - 2.4A - SOT-223 STripFET⑩ II Power MOSFET |
| STN3-415 | 制造商:Carlo Gavazzi 功能描述: |
| STN3-515 | 制造商:Carlo Gavazzi 功能描述: |
| STN3904 | 制造商:KODENSHI 制造商全稱:KODENSHI KOREA CORP. 功能描述:NPN Silicon Transistor |
| STN3904S | 制造商:AUK 制造商全稱:AUK corp 功能描述:NPN Silicon Transistor |
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