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參數資料
| 型號： | STP16NF06LFP |
| 廠商： | 意法半導體 |
| 英文描述： | N-CHANNEL 60V - 0.07 ohm - 16A TO-220/TO-220FP STripFET⑩ II POWER MOSFET |
| 中文描述： | N溝道60V的- 0.07歐姆- 16A條TO-220/TO-220FP STripFET⑩二功率MOSFET |
| 文件頁數： | 1/9頁 |
| 文件大?。?/td> | 337K |
| 代理商： | STP16NF06LFP |
1/9
August 2002
.
STP16NF06L
STP16NF06LFP
N-CHANNEL 60V - 0.07
- 16A TO-220/TO-220FP
STripFET II POWER MOSFET
I
TYPICAL R
DS
(on) = 0.07
I
EXCEPTIONAL dv/dt CAPABILITY
I
LOW GATE CHARGE AT 100
o
C
I
LOW THRESHOLD DRIVE
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size" strip-
based process. The resulting transistor shows extremely
high packing density for low on-resistance, rugged
avalanche characteristics and less critical alignment
steps
therefore
a
remarkable
reproducibility.
manufacturing
APPLICATIONS
I
MOTOR CONTROL, AUDIO AMPLIFIERS
I
HIGH CURRENT, HIGH SPEED SWITCHING
I
SOLENOID AND RELAY DRIVERS
I
DC-DC & DC-AC CONVERTERS
I
AUTOMOTIVE ENVIRONMENT
TYPE
V
DSS
R
DS(on)
I
D
STP16NF06L
STP60NF06LFP
60 V
60 V
<0.09
<0.09
16 A
11 A
1
2
3
1
2
3
TO-220
TO-220FP
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
(
)
Pulse width limited by safe operating area.
(*) Current Limited by package’s thermal resistance
(1) I
≤
16A, di/dt
≤
210A/μs, V
DD
≤
V
, T
j
≤
T
JMAX.
(2) Starting T
j
= 25
o
C, I
D
= 8A, V
DD
= 30V
Parameter
Value
Unit
STP16NF06L
STP16NF06LFP
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
(
)
P
tot
Drain-source Voltage (V
GS
= 0)
Drain-gate Voltage (R
GS
= 20 k
)
Gate- source Voltage
Drain Current (continuous) at T
C
= 25°C
Drain Current (continuous) at T
C
= 100°C
Drain Current (pulsed)
Total Dissipation at T
C
= 25°C
Derating Factor
Peak Diode Recovery voltage slope
Single Pulse Avalanche Energy
Insulation Withstand Voltage (DC)
Storage Temperature
Operating Junction Temperature
60
60
± 16
V
V
V
A
A
A
W
16
11
64
45
0.3
11(*)
7.5(*)
44(*)
25
0.17
W/°C
V/ns
mJ
V
dv/dt
(1)
E
AS (2)
V
ISO
T
stg
T
j
23
127
--------
2500
-55 to 175
°C
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