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參數(shù)資料
| 型號(hào)： | STP22NE10L |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | CAP,Paper,216uF |
| 中文描述： | ? - 100V的通道- 0.07歐姆- 22A條，220 STripFET功率MOSFET |
| 文件頁(yè)數(shù)： | 1/8頁(yè) |
| 文件大小： | 83K |
| 代理商： | STP22NE10L |
STP22NE10L
N - CHANNEL 100V - 0.07
- 22A TO-220
STripFET
POWER MOSFET
I
TYPICAL R
DS(on)
= 0.07
I
LOW THRESHOLD DRIVE
I
LOGIC LEVEL DEVICE
DESCRIPTION
This Power MOSFET is the latest developmentof
STMicroelectronics
unique
Size
”
strip-based
process.
transistor shows extremely high packing density
for
low
on-resistance,
characteristics and less critical alignment steps
therefore
a
remarkable
reproducibility.
”Single
The
Feature
resulting
rugged
avalanche
manufacturing
APPLICATIONS
I
HIGH CURRENT, HIGH SPEED SWITCHING
I
SOLENOID AND RELAYDRIVERS
I
MOTOR CONTROL, AUDIO AMPLIFIERS
I
DC-DC & DC-AC CONVERTERS
INTERNAL SCHEMATIC DIAGRAM
TYPE
V
DSS
R
DS(on)
< 0.085
I
D
STP22NE10L
100 V
22 A
November 1999
1
2
3
TO-220
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
(
)
P
tot
Parameter
Value
100
100
±
20
22
14
88
90
0.6
250
-65 to 175
175
Unit
V
V
V
A
A
A
W
W/
o
C
mJ
o
C
o
C
Drain-source Voltage (V
GS
= 0)
Drain- gate Voltage (R
GS
= 20 k
)
Gate-source Voltage
Drain Current (continuous) at T
c
= 25
o
C
Drain Current (continuous) at T
c
= 100
o
C
Drain Current (pulsed)
Total Dissipation at T
c
= 25
o
C
Derating Factor
Single Pulse Avalanche Energy
Storage Temperature
Max. Operating Junction Temperature
(
)
Pulse width limitedby safe operating area
E
AS
(
1
)
T
stg
T
j
(
1
)
starting T
j
= 25
o
C, I
D
=22A , V
DD
= 50V
1/8
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| STP22NM50 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 500V - 0.16ohm - 20A TO-220/FP/D2PAK/I2PAK MDmesh⑩Power MOSFET |
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