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參數資料
| 型號： | STP19NB20FP |
| 廠商： | 意法半導體 |
| 英文描述： | N-Channel Enhancement Mode PowerMESHTM MOSFET(N溝道增強模式MOSFET) |
| 中文描述： | N溝道增強模式PowerMESHTM MOSFET的（不適用溝道增強模式MOSFET的） |
| 文件頁數： | 1/9頁 |
| 文件大小： | 116K |
| 代理商： | STP19NB20FP |
STP19NB20
STP19NB20FP
N - CHANNEL ENHANCEMENT MODE
PowerMESH
MOSFET
I
TYPICAL R
DS(on)
= 0.150
I
EXTREMELY HIGH dv/dt CAPABILITY
I
100% AVALANCHE TESTED
I
VERYLOW INTRINSIC CAPACITANCES
I
GATECHARGE MINIMIZED
DESCRIPTION
Using the latest high voltage MESH OVERLAY
process,
SGS-Thomson
advanced
family
of
power
outstanding
performances.
pending strip layout coupled with the Company’s
proprietary edge termination structure, gives the
lowest RDS(on) per area, exceptional avalanche
and dv/dt capabilities and unrivalled gate charge
and switching characteristics.
has
designed
MOSFETs
The
new
an
with
patent
APPLICATIONS
I
HIGH CURRENT, HIGH SPEEDSWITCHING
I
SWITCH MODE POWER SUPPLIES(SMPS)
I
DC-AC CONVERTERS FOR WELDING
EQUIPMENTAND UNINTERRUPTIBLE
POWERSUPPLIES AND MOTOR DRIVE
INTERNAL SCHEMATIC DIAGRAM
December 1997
TO-220
TO-220FP
1
2
3
1
2
3
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
STP19NB20
STP19NB20FP
200
200
±
30
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
(
)
P
tot
Drain-source Voltage (V
GS
= 0)
Drain- gate Voltage (R
GS
= 20 k
)
Gate-source Voltage
Drain Current (continuous) at T
c
= 25
o
C
Drain Current (continuous) at T
c
= 100
o
C
Drain Current (pulsed)
Total Dissipation at T
c
= 25
o
C
Derating Factor
Peak Diode Recovery voltage slope
Insulation Withstand Voltage (DC)
Storage Temperature
Max. Operating Junction Temperature
(
) Pulse width limitedby safe operating area
V
V
V
A
A
A
W
19
12
76
125
1
5.5
10
6.0
76
35
0.28
5.5
W/
o
C
V/ns
V
o
C
o
C
dv/dt(
1
)
V
ISO
T
stg
T
j
2000
-65 to 150
150
(
1
) I
SD
≤
19A,di/dt
≤
300 A/
μ
s, V
DD
≤
V
(BR)DSS
, Tj
≤
T
JMAX
TYPE
V
DSS
200 V
200 V
R
DS(on)
< 0.180
< 0.180
I
D
STP19NB20
STP19NB20FP
19 A
10 A
1/9
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PDF描述 |
|---|---|
| STP19NB20 | N-Channel Enhancement Mode PowerMESHTM MOSFET(N溝道增強模式MOSFET) |
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| STP22NF03L | N-CHANNEL 30V - 0.038ohm - 22A TO-220 STripFET⑩ POWER MOSFET |
| STP22NS25Z | N-CHANNEL 250V - 0.13ohm - 22A TO-220/D2PAK Zener-Protected MESH OVERLAY⑩ MOSFET |
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相關代理商/技術參數 |
參數描述 |
|---|---|
| STP19NB20FP | 制造商:STMicroelectronics 功能描述:MOSFET N TO-220FP |
| STP19NF20 | 功能描述:MOSFET N-CHANNEL 200V 0.15 OHM - 15A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STP19NM50N | 功能描述:MOSFET N-Ch 500V 14A Mosfet Mdmesh II Power RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STP19NM65N | 功能描述:MOSFET N-channel 650V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| S-TP1G03-T25-512 | 制造商:RadiSys 功能描述:P945GM 1LAN T2500, 512MB |
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