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參數(shù)資料
| 型號： | STP4NB100FP |
| 廠商： | 意法半導體 |
| 英文描述： | N-Channel 1000V-4Ω-3.8A- TO-220/TO-220FP PowerMESHTM MOSFET(N溝道MOSFET) |
| 中文描述： | N溝道1000V -4Ω- 3.8A - TO-220/TO-220FP PowerMESHTM MOSFET的（不適用溝道MOSFET的） |
| 文件頁數(shù)： | 1/6頁 |
| 文件大小： | 52K |
| 代理商： | STP4NB100FP |
STP4NB100
STP4NB100FP
N - CHANNEL 1000V - 4
- 3.8A - TO-220/TO-220FP
PowerMESH
MOSFET
PRELIMINARY DATA
I
TYPICAL R
DS(on)
= 4
I
EXTREMELY HIGH dv/dt CAPABILITY
I
100% AVALANCHE TESTED
I
VERYLOW INTRINSIC CAPACITANCES
I
GATECHARGE MINIMIZED
DESCRIPTION
Using the latest high voltage MESH OVERLAY
process,
SGS-Thomson
advanced
family
of
power
outstanding
performances.
pending strip layout coupled with the Company’s
proprietary edge termination structure, gives the
lowest RDS(on) per area, exceptional avalanche
and dv/dt capabilities and unrivalled gate charge
and switching characteristics.
has
designed
MOSFETs
The
new
an
with
patent
APPLICATIONS
I
HIGH CURRENT, HIGH SPEEDSWITCHING
I
UNINTERRUPTIBLE POWER SUPPLY(UPS)
I
DC-DC & DC-AC CONVERTERS FOR
TELECOM, INDUSTRIAL AND CONSUMER
ENVIRONMENT
INTERNAL SCHEMATIC DIAGRAM
June 1998
TO-220
TO-220FP
1
2
3
1
2
3
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
STP4NB100
STP4NB100FP
1000
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
(
)
P
tot
Drain-source Voltage (V
GS
= 0)
Drain- gate Voltage (R
GS
= 20 k
)
Gate-source Voltage
Drain Current (continuous) at T
c
= 25
o
C
Drain Current (continuous) at T
c
= 100
o
C
Drain Current (pulsed)
Total Dissipation at T
c
= 25
o
C
Derating Factor
V
1000
±
30
V
V
3.8
2.4
2.1
1.3
A
A
15.2
15.2
A
125
1
40
0.32
W
W/
o
C
dv/dt(
1
)
Peak Diode Recovery voltage slope
4.5
4.5
V/ns
V
ISO
T
stg
T
j
Insulation Withstand Voltage (DC)
2000
V
o
C
o
C
Storage Temperature
-65 to 150
Max. Operating Junction Temperature
150
TYPE
V
DSS
R
DS(on)
< 4.4
< 4.4
I
D
STP4NB100
STP4NB100FP
1000 V
1000 V
3.8 A
2.1 A
1/6
相關PDF資料 |
PDF描述 |
|---|---|
| STP4NB100 | N-Channel 1000V-4Ω-3.8A- TO-220/TO-220FP PowerMESHTM MOSFET(N溝道MOSFET) |
| STP4NB30 | N-CHANNEL 300V - 1.8ohm - 4A - TO-220/TO-220FP PowerMesh⑩ MOSFET |
| STP4NB30FP | N-CHANNEL 300V - 1.8ohm - 4A - TO-220/TO-220FP PowerMesh⑩ MOSFET |
| STP4NB50FP | N-Channel Enhancement Mode PowerMESHTM MOSFET(N溝道增強模式MOSFET) |
| STP4NB50 | N-Channel Enhancement Mode PowerMESHTM MOSFET(N溝道增強模式MOSFET) |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| STP4NB30 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 300V - 1.8ohm - 4A - TO-220/TO-220FP PowerMesh⑩ MOSFET |
| STP4NB30FP | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 300V - 1.8ohm - 4A - TO-220/TO-220FP PowerMesh⑩ MOSFET |
| STP4NB50 | 功能描述:MOSFET RO 511-STP4NK50Z RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STP4NB50FP | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 500V - 2.5ohm - 3.8A - TO-220/TO-220FP PowerMesh⑩ MOSFET |
| STP4NB80 | 功能描述:MOSFET RO 512-FQP4N80 3/05 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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