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參數(shù)資料
| 型號(hào)： | STP6LNC60 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | N-CHANNEL 600V - 1ohm - 5.8A TO-220/TO-220FP PowerMesh⑩II MOSFET |
| 中文描述： | N溝道600V的- 1ohm - 5.8A TO-220/TO-220FP PowerMesh第二MOSFET的⑩ |
| 文件頁(yè)數(shù)： | 1/9頁(yè) |
| 文件大小： | 324K |
| 代理商： | STP6LNC60 |
1/9
October 2001
STP6LNC60
STP6LNC60FP
N-CHANNEL 600V - 1
- 5.8A TO-220/TO-220FP
PowerMeshII MOSFET
(1)I
SD
≤
5.8A, di/dt
≤
100A/μs, V
DD
≤
V
(BR)DSS
, T
j
≤
T
JMAX.
INTERNAL SCHEMATIC DIAGRAM
I
TYPICAL R
DS
(on) = 1.0
I
EXTREMELY HIGH dv/dt CAPABILITY
I
100% AVALANCHE TESTED
I
NEW HIGH VOLTAGE BENCHMARK
I
GATE CHARGE MINIMIZED
DESCRIPTION
The PowerMESH
II is
the evolution of the first
generation of MESH OVERLAY
.
The layout re-
finements introduced greatly improve the Ron*area
figure of merit while keeping the device at the lead-
ing edge for what concerns switching speed, gate
charge and ruggedness.
APPLICATIONS
I
HIGH CURRENT, HIGH SPEED SWITCHING
I
SWITH MODE POWER SUPPLIES (SMPS)
I
DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVES
ABSOLUTE MAXIMUM RATINGS
Symbol
()Pulse width limited by safe operating area
(*) Limited only by maximum temperature allowed
TYPE
V
DSS
R
DS(on)
I
D
STP6LNC60
STP6LNC60FP
600 V
600 V
< 1.25
< 1.25
5.8 A
5.8 A
Parameter
Value
Unit
STP6LNC60
STP6LNC60FP
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
(
G
)
P
TOT
Drain-source Voltage (V
GS
= 0)
Drain-gate Voltage (R
GS
= 20 k
)
600
V
600
V
Gate- source Voltage
±30
V
Drain Current (continuos) at T
C
= 25°C
Drain Current (continuos) at T
C
= 100°C
5.8
5.8 (*)
A
3.65
3.65 (*)
A
Drain Current (pulsed)
23.2
23.2 (*)
A
Total Dissipation at T
C
= 25°C
Derating Factor
Peak Diode Recovery voltage slope
100
35
W
0.8
0.28
W/°C
V/ns
dv/dt (1)
V
ISO
T
stg
T
j
3
Insulation Withstand Voltage (DC)
-
2500
V
Storage Temperature
–65 to 150
°C
Max. Operating Junction Temperature
TO-220
TO-220FP
1
2
3
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PDF描述 |
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| STP6LNC60FP | N-CHANNEL 600V - 1ohm - 5.8A TO-220/TO-220FP PowerMesh⑩II MOSFET |
| STP6N50FI | ; Leaded Process Compatible:Yes RoHS Compliant: Yes |
| STP6N50 | N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR |
| STP6NA60FP | N-Channel Enhancement Mode Fast Power MOS Transistor(N溝道增強(qiáng)模式快速功率MOS晶體管) |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| STP6LNC60FP | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 600V - 1ohm - 5.8A TO-220/TO-220FP PowerMesh⑩II MOSFET |
| STP6N120K3 | 功能描述:MOSFET N-Ch 1200V 1.95 Ohm 6A Zener SuperMESH3 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STP6N25 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS |
| STP6N25FI | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS |
| STP6N50 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR |
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