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參數資料
| 型號： | STP6NA60FP |
| 廠商： | 意法半導體 |
| 英文描述： | N-Channel Enhancement Mode Fast Power MOS Transistor(N溝道增強模式快速功率MOS晶體管) |
| 中文描述： | N溝道增強模式快速功率MOS晶體管（不適用溝道增強模式快速功率馬鞍山晶體管） |
| 文件頁數： | 1/5頁 |
| 文件大小： | 49K |
| 代理商： | STP6NA60FP |
STP6NA60FP
N - CHANNEL ENHANCEMENT MODE
FAST POWER MOS TRANSISTOR
PRELIMINARY DATA
I
TYPICAL R
DS(on)
= 1
I
±
30V GATE TO SOURCE VOLTAGE RATING
I
100% AVALANCHE TESTED
I
REPETITIVE AVALANCHE DATA AT 100
o
C
LOWINTRINSIC CAPACITANCES
I
GATECHARGE MINIMIZED
I
REDUCED THRESHOLD VOLTAGESPREAD
I
DESCRIPTION
This series of POWER MOSFETS represents
the most advanced high voltage technology.
The optmized cell layout coupled with a new
proprietary edge termination concur to give
the device low
RDS(on) and gate charge,
unequalled
ruggedness
switching performance.
and
superior
APPLICATIONS
I
HIGH CURRENT, HIGH SPEEDSWITCHING
I
SWITCH MODE POWER SUPPLIES(SMPS)
I
DC-AC CONVERTERS FOR WELDING
EQUIPMENTAND UNINTERRUPTIBLE
POWERSUPPLIES AND MOTOR DRIVE
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
(
)
P
tot
Parameter
Value
600
600
±
30
3.9
2.6
26
40
0.32
2000
-65 to 150
150
Unit
V
V
V
A
A
A
W
W/
o
C
V
o
C
o
C
Drain-source Voltage (V
GS
= 0)
Drain- gate Voltage (R
GS
= 20 k
)
Gate-source Voltage
Drain Current (continuous) at T
c
= 25
o
C
Drain Current (continuous) at T
c
= 100
o
C
Drain Current (pulsed)
Total Dissipation at T
c
= 25
o
C
Derating Factor
Insulation Withstand Voltage (DC)
Storage Temperature
Max. Operating Junction Temperature
(
) Pulse width limitedby safe operating area
V
ISO
T
stg
T
j
TYPE
V
DSS
600 V
R
DS(on)
< 1.2
I
D
STP6NA60FP
3.9 A
October 1997
1
2
3
TO-220FP
1/5
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| STP6NB50 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET |
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