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參數(shù)資料
型號: STP75NE75FP
廠商: 意法半導(dǎo)體
英文描述: N - CHANNEL 75V - 0.01ohm - 75A TO-220/TO-220FP STripFET POWER MOSFET
中文描述: ? -通道75V的- 0.01ohm - 75A條TO-220/TO-220FP STripFET功率MOSFET
文件頁數(shù): 1/9頁
文件大小: 106K
代理商: STP75NE75FP
STP75NE75
STP75NE75FP
N - CHANNEL 75V - 0.01
- 75A TO-220/TO-220FP
STripFET
POWER MOSFET
I
TYPICAL R
DS(on)
= 0.01
I
EXCEPTIONAL dv/dtCAPABILITY
I
100%AVALANCHE TESTED
I
APPLICATIONORIENTED
CHARACTERIZATION
DESCRIPTION
This Power MOSFET is the latest developmentof
STMicroelectronics
unique
Size
” strip-based process.The resulting transi-
stor shows extremelyhigh packing density forlow
on-resistance, rugged avalanche characteristics
and less critical alignment steps therefore a re-
markable manufacturingreproducibility.
”Single
Feature
APPLICATIONS
I
SOLENOID AND RELAYDRIVERS
I
DC MOTORCONTROL, AUDIO AMPLIFIERS
I
DC-DC CONVERTERS
I
AUTOMOTIVE ENVIRONMENT
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
STP75NE75
STP75NE75FP
75
75
±
20
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
(
)
P
tot
Drain-source Voltage (V
GS
= 0)
Drain- gate Voltage (R
GS
= 20 k
)
Gate-source Voltage
Drain Current (continuous) at T
c
= 25
o
C
Drain Current (continuous) at T
c
= 100
o
C
Drain Current (pulsed)
Total Dissipation at T
c
= 25
o
C
Derating Factor
Insulation Withstand Voltage (DC)
Peak Diode Recovery voltage slope
Storage Temperature
Max. Operating Junction Temperature
(
) Pulse width limited by safe operating area
V
V
V
A
A
A
W
75
53
300
160
1.06
40
28
160
50
0.37
2000
W/
o
C
V
V/ns
o
C
o
C
V
ISO
dv/dt
T
stg
T
j
7
-65 to 175
175
(
1
) I
SD
75 A, di/dt
300 A/
μ
s, V
DD
V
(BR)DSS
, T
j
T
JMAX
TYPE
V
DSS
R
DS(on)
< 0.013
< 0.013
I
D
STP75NE75
STP75NE75FP
75 V
75 V
75 A
40 A
May 1999
TO-220
TO-220FP
1
2
3
1
2
3
1/9
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