- 您現在的位置：買賣IC網 > PDF目錄382564 > STP7NB60FP (意法半導體) N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET PDF資料下載
參數資料
| 型號： | STP7NB60FP |
| 廠商： | 意法半導體 |
| 英文描述： | N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET |
| 中文描述： | ? -通道增強型MOSFET的PowerMESH |
| 文件頁數： | 1/9頁 |
| 文件大小： | 115K |
| 代理商： | STP7NB60FP |
STP7NB60
STP7NB60FP
N - CHANNEL ENHANCEMENT MODE
PowerMESH
MOSFET
I
TYPICALR
DS(on)
= 1.0
I
EXTREMELY HIGH dv/dt CAPABILITY
I
100%AVALANCHE TESTED
I
VERYLOW INTRINSIC CAPACITANCES
I
GATECHARGE MINIMIZED
DESCRIPTION
Using the latest high voltage MESH OVERLAY
process,
SGS-Thomson
advanced
family
of
power
outstanding
performances.
pending strip layout coupled with the Company’s
proprietary edge termination structure, gives the
lowest RDS(on) per area, exceptional avalanche
and dv/dt capabilities and unrivalled gate charge
and switching characteristics.
has
designed
MOSFETs
The
new
an
with
patent
APPLICATIONS
I
HIGH CURRENT, HIGH SPEED SWITCHING
I
SWITCHMODE POWER SUPPLIES(SMPS)
I
DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWERSUPPLIESAND MOTORDRIVE
INTERNAL SCHEMATIC DIAGRAM
March 1998
TO-220
TO-220FP
1
2
3
1
2
3
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
STP7NB60
STP7NB60FP
600
600
±
30
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
(
)
P
tot
Drain-source Voltage (V
GS
= 0)
Drain- gate Voltage (R
GS
= 20 k
)
Gate-source Voltage
Drain Current (continuous) at T
c
= 25
o
C
Drain Current (continuous) at T
c
= 100
o
C
Drain Current (pulsed)
Total Dissipation at T
c
= 25
o
C
Derating Factor
Peak Diode Recovery voltage slope
Insulation Withstand Voltage (DC)
Storage Temperature
Max. Operating Junction Temperature
(
) Pulse width limitedby safe operating area
V
V
V
A
A
A
W
7.2
4.5
28.8
125
1.0
4.5
4.1
2.6
28.8
40
0.32
4.5
2000
W/
o
C
V/ns
V
o
C
o
C
dv/dt(
1
)
V
ISO
T
stg
T
j
-65 to 150
150
(
1
) I
SD
≤
7A, di/dt
≤
200 A/
μ
s, V
DD
≤
V
(BR)DSS
, Tj
≤
T
JMAX
TYPE
V
DSS
R
DS(on)
< 1.2
< 1.2
I
D
STP7NB60
STP7NB60FP
600 V
600 V
7.2 A
4.1 A
1/9
相關PDF資料 |
PDF描述 |
|---|---|
| STP80NE03L | TERMINAL |
| STP80NE06-10 | CAPACITOR, CASE C, 68UF, 6.3V; Application:Solid; Capacitance:68uF; Tolerance, capacitance:20%; Series:NOS; Voltage, rating:6.3V; Capacitor dielectric type:Niobium Oxide; Case style:C; Depth, external:2.6mm; Length / Height, RoHS Compliant: Yes |
| STP80NF55-07 | N-Channel 55V-0.0055Ω-80A- TO-220 STripFET Power MOSFET(N溝道功率MOSFET) |
| STPAC02F1 | RF DETECTOR FOR POWER AMPLIFIER CONTROL WITH INTERNAL TEMPERATURE COMPENSATION IPADTM |
| STPR2420 | ULTRA-FAST RECOVERY RECTIFIER DIODES |
相關代理商/技術參數 |
參數描述 |
|---|---|
| STP7NB80 | 制造商:STMicroelectronics 功能描述: |
| STP7NB80FP | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N - CHANNEL 800V - 1.2ohm - 6.5A - TO-220/TO-220FP PowerMESH MOSFET |
| STP7NC40 | 功能描述:MOSFET N-Ch 400 Volt 7 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STP7NC70Z | 功能描述:MOSFET TO-220AB RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STP7NC70ZFP | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 700V - 1.1ohm - 6A TO-220/FP/D2PAK/I2PAK Zener-Protected PowerMESH⑩III MOSFET |
發布緊急采購，3分鐘左右您將得到回復。