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參數資料
| 型號： | STQ1HNC60 |
| 廠商： | 意法半導體 |
| 英文描述： | N-CHANNEL 600V - 7ohm - 0.4A TO-92 PowerMesh⑩II MOSFET |
| 中文描述： | N溝道600V的- 7ohm - 0.4A至- 92 PowerMesh第二MOSFET的⑩ |
| 文件頁數： | 1/6頁 |
| 文件大小： | 116K |
| 代理商： | STQ1HNC60 |
1/6
PRELIMINARY DATA
August 2001
STQ1HNC60
N-CHANNEL 600V - 7
- 0.4A TO-92
PowerMeshII MOSFET
I
TYPICAL R
DS
(on) = 7
I
EXTREMELY HIGH dv/dt CAPABILITY
I
100% AVALANCHE TESTED
I
NEW HIGH VOLTAGE BENCHMARK
I
GATE CHARGE MINIMIZED
DESCRIPTION
Using the latest high voltage MESH OVERLAYII
process, STMicroelectronics has designed an ad-
vanced family of power MOSFETs with outstanding
performances. The new patent pending strip layout
coupled with the Company’s proprietary edge termi-
nation structure, gives the lowest RDS(on) per area,
exceptional avalanche and dv/dt capabilities and
unrivalled gate charge and switching characteris-
tics.
APPLICATIONS
I
SWITCH MODE LOW POWER SUPPIES
(SMPS)
I
CFL
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
Drain-source Voltage (V
GS
= 0)
V
DGR
Drain-gate Voltage (R
GS
= 20 k
)
V
GS
Gate- source Voltage
I
D
Drain Current (continuos) at T
C
= 25°C
I
D
Drain Current (continuos) at T
C
= 100°C
I
DM
(
G
)
Drain Current (pulsed)
P
TOT
Total Dissipation at T
C
= 25°C
Derating Factor
dv/dt(1)
Peak Diode Recovery voltage slope
T
stg
Storage Temperature
T
j
Max. Operating Junction Temperature
()Pulse width limited by safe operating area
TYPE
V
DSS
R
DS(on)
I
D
STQ1HNC60
600 V
< 8
0.4 A
Parameter
Value
Unit
600
V
600
V
± 30
V
0.4
A
0.25
A
1.6
A
3.5
W
0.028
3.5
W/°C
V/ns
–65 to 150
°C
150
°C
(1)I
SD
≤
0.4 A, di/dt
≤
100A/μs, V
DD
≤
V
(BR)DSS
, T
j
≤
T
JMAX.
TO-92
INTERNAL SCHEMATIC DIAGRAM
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相關代理商/技術參數 |
參數描述 |
|---|---|
| STQ1HNK60R | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 600V - 8 - 1A DPAK / IPAK / TO-92 SuperMESH Power MOSFET |
| STQ1HNK60R-AP | 制造商:STMicroelectronics 功能描述:Trans MOSFET N-CH 600V 0.4A 3-Pin TO-92 Ammo 制造商:STMicroelectronics 功能描述:N-CHANNEL 600V - 8 OHM MOSFET 制造商:STMicroelectronics 功能描述:MOSFET N-CH 600V 400MA TO-92 制造商:STMicroelectronics 功能描述:MOSFET N CH 600V 0.4A TO92 制造商:STMicroelectronics 功能描述:MOSFET, N CH, 600V, 0.4A, TO92 制造商:STMicroelectronics 功能描述:MOSFET, N CH, 600V, 0.4A, TO92; Transistor Polarity:N Channel; Continuous Drain Current Id:500mA; Drain Source Voltage Vds:600V; On Resistance Rds(on):8ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; No. of Pins:3 ;RoHS Compliant: Yes 制造商:STMicroelectronics 功能描述:MOSFET N-Channel 600V 0.4A TO-92 |
| STQ1NC45 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 450V - 4.1ohm - 1.5 A IPAK / TO-92 SuperMESH⑩Power MOSFET |
| STQ1NC45-AP | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 450V - 4.1ohm - 1.5 A IPAK / TO-92 SuperMESH⑩Power MOSFET |
| STQ1NC45R | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 450V 4.1OHM 1.5A DPAK/IPAK/TO-92 SUPERMESH POWER MOSFET |
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