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參數資料
| 型號： | STS11NF30L |
| 廠商： | 意法半導體 |
| 英文描述： | N-CHANNEL 30V - 0.009 ohm - 11A SO-8 LOW GATE CHARGE STripFET POWER MOSFET |
| 中文描述： | N溝道30V的- 0.009歐姆-第11A條的SO - 8低柵極電荷STripFET功率MOSFET |
| 文件頁數： | 1/6頁 |
| 文件大小： | 45K |
| 代理商： | STS11NF30L |
STS11NF30L
N-CHANNEL 30V - 0.009
- 11A SO-8
LOW GATE CHARGE STripFET
POWER MOSFET
PRELIMINARY DATA
I
TYPICAL R
DS(on)
= 0.014
@ 5V
I
TYPICAL Q
g
= 19 nC @ 4.5V
I
OPTIMAL R
DS(on)
x Q
g
TRADE-OFF
I
CONDUCTION LOSSESREDUCED
I
SWITCHING LOSSESREDUCED
DESCRIPTION
This application specific Power Mosfet is the third
generation of STMicroelectronics unique ”Single
Feature Size
” strip-based process. The resul-
ting transistor shows the best trade-off between
on-resistance and gate charge. When used as
high and low side in buck regulators, it gives the
best performancein termsof both conductionand
switching losses. This is extremely important for
motherboards where fast switching and high effi-
ciency are of paramountimportance.
APPLICATIONS
I
SPECIFICALLYDESIGNED AND
OPTIMISEDFOR HIGH EFFICIENCYCPU
CORE DC/DC CONVERTERS FOR MOBILE
PCs
INTERNAL SCHEMATIC DIAGRAM
April 2000
SO-8
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V
DS
Drain-source Voltage (V
GS
= 0)
30
V
V
DGR
Drain- gate Voltage (R
GS
= 20 k
)
30
V
V
GS
Gate-source Voltage
Drain Current (continuous) at Tc = 25
o
C
Drain Current (continuous) at T
c
= 100
o
C
±
20
V
I
D
11
7
A
A
I
DM
(
)
Drain Current (pulsed)
44
A
P
tot
Total Dissipation at T
c
= 25
o
C
2.5
W
(
) Pulse width limited by safe operating area
TYPE
V
DSS
R
DS(on)
< 0.012
I
D
STS11NF30L
30 V
11 A
1/6
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相關代理商/技術參數 |
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|---|---|
| STS11NF30L_07 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-channel 30V - 0.0085Ω - 11A SO-8 Low gate charge STripFET? II Power MOSFET |
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