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參數資料
| 型號： | STS1DNC45 |
| 廠商： | 意法半導體 |
| 英文描述： | TOOLS,HEX BITS,SETS,GORILLA-GRIP FOLD-UP TOOL SET,8-PC.TAMPER-RESISTANT, TR9-TR40,HAND TOOLS,GORILLA GRIP<SUP>®</SUP> FOLD-UP TOOL SETS ,BONDHUS |
| 中文描述： | 雙N溝道450V - 4.1ohm - 0.4A的SO - 8 SuperMESH⑩功率MOSFET |
| 文件頁數： | 1/8頁 |
| 文件大小： | 296K |
| 代理商： | STS1DNC45 |
1/8
June 2003
STS1DNC45
DUAL N-CHANNEL 450V - 4.1
- 0.4A SO-8
SuperMESH POWER MOSFET
(1)I
SD
≤
0.4 A, di/dt
≤
100A/μs, V
DD
≤
V
(BR)DSS
, T
j
≤
T
JMAX.
I
TYPICAL R
DS
(on) = 4.1
I
STANDARD OUTLINE FOR EASY
AUTOMATED SURFACE MOUNT ASSEMBLY
I
GATE CHARGE MINIMIZED
DESCRIPTION
The SuperMESH series is obtained through an
extreme optimization of ST’s well established strip-
based PowerMESH layout. In addition to pushing
on-resistance significantly down, special care is tak-
en to ensure a very good dv/dt capability for the
most demanding applications. Such series comple-
ments ST full range of high voltage MOSFETs in-
cluding revolutionary MDmesh products.
APPLICATIONS
I
SWITCH MODE LOW POWER SUPPLIES
(SMPS)
I
DC-DC CONVERTERS
I
LOW POWER, LOW COST CFL (COMPACT
FLUORESCENT LAMPS)
I
LOW POWER BATTERY CHARGERS
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
Drain-source Voltage (V
GS
= 0)
V
DGR
Drain-gate Voltage (R
GS
= 20 k
)
V
GS
Gate- source Voltage
I
D
Drain Current (continuous) at T
C
= 25°C
Drain Current (continuous) at T
C
= 100°C
I
DM
( )
Drain Current (pulsed)
P
TOT
Total Dissipation at T
C
= 25°C Dual Operation
Total Dissipation at T
C
= 25°C Single Operation
dv/dt(1)
Peak Diode Recovery voltage slope
(
G
) Pulse width limited by safe operating area
TYPE
V
DSS
R
DS(on)
I
D
STS1DNC45
450 V
< 4.5
0.4 A
Parameter
Value
Unit
450
V
450
V
± 30
V
0.40
0.25
A
A
1.6
A
1.6
2
W
W
3
V/ns
SO-8
INTERNAL SCHEMATIC DIAGRAM
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相關代理商/技術參數 |
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|---|---|
| STS1DNF20 | 功能描述:MOSFET N-Ch Mosfet APM Power Mosfet SO 08 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STS1FRM | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Telecomm/Datacomm |
| STS1HNC60 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 600V - 7ohm - 0.4A SO-8 PowerMesh⑩II MOSFET |
| STS1HNK60 | 功能描述:MOSFET NPN Transistor RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STS1NC60 | 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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