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參數資料
| 型號： | STS1NC60 |
| 廠商： | 意法半導體 |
| 英文描述： | N-CHANNEL 600V - 12ohm - 0.3A - SO-8 PowerMESH⑩II MOSFET |
| 中文描述： | N溝道600V的- 12ohm - 0.3A -的SO - 8 MOSFET的第二PowerMESH⑩ |
| 文件頁數： | 1/8頁 |
| 文件大小： | 272K |
| 代理商： | STS1NC60 |
1/8
July 2001
STS1NC60
N-CHANNEL 600V - 12
- 0.3A - SO-8
PowerMESHII MOSFET
(1)I
SD
≤
0.3A, di/dt
≤
100A/μs, V
DD
≤
V
(BR)DSS
, T
j
≤
T
JMAX
I
TYPICAL R
DS
(on) = 12
I
EXTREMELY HIGH dv/dt CAPABILITY
I
100% AVALANCHE TESTED
I
NEW HIGH VOLTAGE BENCHMARK
I
GATE CHARGE MINIMIZED
DESCRIPTION
The PowerMESH
II is
the evolution of the first
generation of MESH OVERLAY
.
The layout re-
finements introduced greatly improve the Ron*area
figure of merit while keeping the device at the lead-
ing edge for what concerns swithing speed, gate
charge and ruggedness.
APPLICATIONS
I
AC ADAPTORS AND BATTERY CHARGERS
I
SWITH MODE POWER SUPPLIES (SMPS)
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
Drain-source Voltage (V
GS
= 0)
V
DGR
Drain-gate Voltage (R
GS
= 20 k
)
V
GS
Gate- source Voltage
I
D
Drain Current (continuos) at T
C
= 25°C
I
D
Drain Current (continuos) at T
C
= 100°C
I
DM
(
G
)
Drain Current (pulsed)
P
TOT
Total Dissipation at T
C
= 25°C
Derating Factor
dv/dt (1)
Peak Diode Recovery voltage slope
T
stg
Storage Temperature
T
j
Max. Operating Junction Temperature
()Pulse width limited by safe operating area
.
TYPE
V
DSS
R
DS(on)
I
D
STS1NC60
600 V
< 15
0.3 A
Parameter
Value
Unit
600
V
600
V
±30
V
0.3
A
0.18
A
1.2
A
2.5
W
0.02
3
W/°C
V/ns
–60 to 150
°C
150
°C
SO-8
INTERNAL SCHEMATIC DIAGRAM
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