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參數資料
| 型號： | STS3DPFS30L |
| 廠商： | 意法半導體 |
| 英文描述： | P - CHANNEL 30V - 0.13ohm - 3A S0-8 STripFET MOSFET PLUS SCHOTTKY RECTIFIER |
| 中文描述： | P -通道30V的- 0.13ohm -第3A的S0 - 8 STripFET肖特基整流器MOSFET的普樂士 |
| 文件頁數： | 1/5頁 |
| 文件大小： | 72K |
| 代理商： | STS3DPFS30L |
STS3DPFS30L
P - CHANNEL 30V - 0.13
- 3A S0-8
STripFET
MOSFET PLUS SCHOTTKY RECTIFIER
PRELIMINARY DATA
DESCRIPTION:
This product associates the latest low voltage
StripFET
in p-channel version to a low drop
Schottky diode. Such configuration is extremely
versatile in implementing, a large variety of DC-DC
converters for printers, portable equipment, and
cellular phones.
INTERNAL SCHEMATIC DIAGRAM
May 2000
MOSFET ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V
DS
V
DGR
V
GS
Drain-source Voltage (V
GS
= 0)
Drain- gate Voltage (R
GS
= 20 k
)
Gate-source Voltage
Drain Current (continuous) at T
c
= 25
o
C
Drain Current (continuous) at T
c
= 100
o
C
Drain Current (pulsed)
Total Dissipation at T
c
= 25
o
C
30
V
30
±
20
V
V
I
D
3
A
I
D
1.9
A
I
DM
(
)
P
tot
12
A
2
W
MAIN PRODUCT CHARACTERISTICS
MOSFET
V
DSS
R
DS(on)
<0.16
V
RRM
30V
I
D
30V
3A
SCHOTTKY
I
F(AV)
3A
V
F(MAX)
0.51V
SO-8
SCHOTTKY ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V
RRM
I
F(RMS)
I
F(AV)
Repetitive Peak Reverse Voltage
30
V
RMS Forward Current
20
A
Average Forward Current
T
L
=125
o
C
δ
=0.5
tp= 10 ms
Sinusoidal
tp=100
μ
s
3
A
I
FSM
Surge Non Repetitive Forward Current
75
A
I
RSM
dv/dt
Non Repetitive Peak Reverse Current
1
A
Critical Rate Of Rise Of Reverse Voltage
(
) Pulse width limited by safe operating area
Note: For the P-CHANNEL MOSFET actual polarity of voltages and current has to be reversed
10000
V/
μ
s
1/5
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