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參數資料
| 型號： | STS4DNF30L |
| 廠商： | 意法半導體 |
| 英文描述： | DUAL N-CHANNEL 30V - 0.039ohm - 4A SO-8 STripFET⑩ POWER MOSFET |
| 中文描述： | 雙N溝道30V的- 0.039ohm - 4A條的SO - 8 STripFET⑩功率MOSFET |
| 文件頁數： | 1/6頁 |
| 文件大?。?/td> | 135K |
| 代理商： | STS4DNF30L |
1/6
PRELIMINARY DATA
August 2002
STS4DNF30L
DUAL N-CHANNEL 30V - 0.039
- 4A SO-8
STripFET POWER MOSFET
I
TYPICAL R
DS(on)
= 0.039
I
STANDARD OUTLINE FOR EASY
AUTOMATED SURFACE MOUNT ASSEMBLY
I
LOW THRESHOLD DRIVE
DESCRIPTION
This Power MOSFET is the second generation of
STMicroelectronics unique “Single Feature Size”
strip-based process. The resulting transistor shows
extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a remarkable
manufacturing reproducibility.
APPLICATIONS
I
BATTERY MANAGMENT IN NOMADIC
EQUIPMENT
I
POWER MANAGMENT IN CELLULAR PHONES
I
DC MOTOR DRIVE
MOSFET ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
Drain-source Voltage (V
GS
= 0)
V
DGR
Drain-gate Voltage (R
GS
= 20 k
)
V
GS
Gate- source Voltage
I
D
Drain Current (continuous) at T
C
= 25°C
I
D
Drain Current (continuous) at T
C
= 100°C
I
DM
(
G
)
Drain Current (pulsed)
P
TOT
Total Dissipation at T
C
= 25°C Dual Operation
(
G
)Pulse width limited by safe operating area
.
TYPE
V
DSS
R
DS(on)
I
D
STS4DNF30L
30 V
< 0.050
4 A
Parameter
Value
Unit
30
V
30
V
± 16
V
4
A
2.5
A
16
A
2
W
SO-8
INTERNAL SCHEMATIC DIAGRAM
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相關代理商/技術參數 |
參數描述 |
|---|---|
| STS4DNF30L_06 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:Dual N-channel 30V - 0.039ohm - 4A SO-8 STripFET TM Power MOSFET |
| STS4DNF60 | 功能描述:MOSFET N Ch 60V 0.070 Ohm 4A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STS4DNF60L | 功能描述:MOSFET N-Ch 60 Volt 4 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STS4DNFS30 | 功能描述:MOSFET N Ch 30V 0.044 Ohm 4.5A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STS4DNFS30L | 功能描述:MOSFET N-Ch 30 Volt 4 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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