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參數資料
| 型號： | STS3DPFS45 |
| 廠商： | 意法半導體 |
| 英文描述： | P-CHANNEL 45V - 0.080 ohm - 3A SO-8 STripFET⑩ MOSFET PLUS SCHOTTKY RECTIFIER |
| 中文描述： | P通道45V的- 0.080歐姆-第3A的SO - 8 MOSFET的普樂士STripFET⑩肖特基整流器 |
| 文件頁數： | 1/8頁 |
| 文件大小： | 263K |
| 代理商： | STS3DPFS45 |
1/8
February 2002
.
STS3DPFS45
P-CHANNEL 45V - 0.080
- 3A SO-8
STripFET MOSFET PLUS SCHOTTKY RECTIFIER
DESCRIPTION
This product associates the latest low voltage
StripFET in p-channel version to a low drop
Schottky diode. Such configuration is extremely
versatile in implementing, a large variety of DC-DC
converters for printers, portable equipment, and
cellular phones.
MOSFET ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
Dain-source Voltage (V
GS
= 0)
V
DGR
Drain-gate Voltage (R
GS
= 20 k
)
V
GS
Gate- source Voltage
I
D
Drain Current (continuos) at T
C
= 25°C
I
D
Drain Current (continuos) at T
C
= 100°C
I
DM
(
)
Drain Current (pulsed)
P
tot
Total Dissipation at T
C
= 25°C
SCHOTTKY ABSOLUTE MAXIMUM RATINGS
Symbol
V
RRM
Repetitive Peak Reverse Voltage
I
F(RMS)
RMS Forward Curren
MAIN PRODUCT CHARACTERISTICS
MOSFET
V
DSS
45 V
I
F(AV)
3 A
R
DS(on)
< 0.11
V
RRM
45 V
I
D
3 A
SCHOTTKY
V
F(MAX)
0.51 V
Parameter
Value
45
45
± 16
3
1.9
12
2
Unit
V
V
V
A
A
A
W
Parameter
Value
45
20
Unit
V
A
I
F(AV)
Average Forward Current
T
L
=125
o
C
δ
=0.5
tp= 10 ms
Sinusoidal
tp=2
μ
s
F=1 kHz
tp=100
μ
s
3
A
I
FSM
Surge Non Repetitive Forward Current
75
A
I
RRM
Repetitive Peak Reverse Current
1
A
I
RSM
dv/dt
Non Repetitive Peak Reverse Current
Critical Rate Of Rise Of Reverse Voltage
(
) Pulse width limited by safe operating area
Note: For the P-CHANNEL MOSFET actual polarity of voltages and current has to be reversed
1
A
10000
V/
μ
s
SO-8
INTERNAL SCHEMATIC DIAGRAM
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