- 您現在的位置：買賣IC網 > PDF目錄382566 > STS3DNE60L (意法半導體) N-Channel 60V-0.065Ω-3A SO-8 STripFETTM Power MOSFET(N溝道功率MOSFET) PDF資料下載
參數資料
| 型號： | STS3DNE60L |
| 廠商： | 意法半導體 |
| 英文描述： | N-Channel 60V-0.065Ω-3A SO-8 STripFETTM Power MOSFET(N溝道功率MOSFET) |
| 中文描述： | N溝道60V的，0.065Ω- 3A條的SO - 8 STripFETTM功率MOSFET（不適用溝道功率MOSFET的） |
| 文件頁數： | 1/5頁 |
| 文件大小： | 70K |
| 代理商： | STS3DNE60L |
STS3DNE60L
N - CHANNEL 60V - 0.065
- 3A SO-8
STripFET
POWER MOSFET
PRELIMINARY DATA
I
TYPICAL R
DS(on)
= 0.065
I
STANDARD OUTLINE FOR EASY
AUTOMATED SURFACE MOUNT ASSEMBLY
I
LOW THRESHOLD DRIVE
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronics unique " Single Feature
Size
"
strip-based process. The resulting
transistor shows extremely high packing density
for
low
on-resistance,
characteristics and less critical alignment steps
therefore
a
remarkable
reproducibility.
rugged
avalanche
manufacturing
APPLICATIONS
I
DC MOTOR DRIVE
I
DC-DC CONVERTERS
I
BATTERY MANAGMENT IN NOMADIC
EQUIPMENT
I
POWER MANAGEMENT IN
PORTABLE/DESKTOP PC
s
INTERNAL SCHEMATIC DIAGRAM
December 1998
SO-8
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V
DS
Drain-source Voltage (V
GS
= 0)
60
V
V
DGR
Drain- gate Voltage (R
GS
= 20 k
)
60
V
V
GS
Gate-source Voltage
Drain Current (continuous) at Tc = 25
o
C
Single Operation
Drain Current (continuous) at T
c
= 100
o
C
Single Operation
±
20
V
I
D
3
1.9
A
A
I
DM
(
)
Drain Current (pulsed)
Total Dissipation at T
c
= 25
o
C Dual Operation
Total Dissipation at T
c
= 25
o
C Sinlge Operation
(
) Pulse width limited by safe operating area
" 175
C Rated for Automotive Design"
12
A
P
tot
2
1.6
W
W
TYPE
V
DSS
60 V
R
DS(on)
< 0.08
I
D
3 A
STS3DNE60L
1/5
相關PDF資料 |
PDF描述 |
|---|---|
| STS3DPF20V | DUAL P-CHANNEL 20V - 0.090 ohm - 3A SO-8 STripFET⑩ POWER MOSFET |
| STS3DPF30L | DUAL P - CHANNEL 30V - 0.145ohm - 3A SO-8 STripFETO POWER MOSFET |
| STS3DPFS30L | P - CHANNEL 30V - 0.13ohm - 3A S0-8 STripFET MOSFET PLUS SCHOTTKY RECTIFIER |
| STS3DPFS30 | P-Channel Enhancement Mode Power MOSFET Plus Schottky Rectifier(P溝道增強模式功率MOSFET和肖特基整流器) |
| STS3DPFS45 | P-CHANNEL 45V - 0.080 ohm - 3A SO-8 STripFET⑩ MOSFET PLUS SCHOTTKY RECTIFIER |
相關代理商/技術參數 |
參數描述 |
|---|---|
| STS3DNF30L | 功能描述:MOSFET N-Ch 30 Volt 3 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STS3DPF20V | 功能描述:MOSFET P-Ch 20 Volt 3 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STS3DPF30L | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:DUAL P - CHANNEL 30V - 0.145ohm - 3A SO-8 STripFETO POWER MOSFET |
| STS3DPF60L | 功能描述:MOSFET Dual P-Ch 60 Volt 3A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STS3DPFS30 | 功能描述:MOSFET P-Ch 30 Volt 3 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
發布緊急采購，3分鐘左右您將得到回復。