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參數資料
| 型號： | STS1HNC60 |
| 廠商： | 意法半導體 |
| 英文描述： | N-CHANNEL 600V - 7ohm - 0.4A SO-8 PowerMesh⑩II MOSFET |
| 中文描述： | N溝道600V的- 7ohm - 0.4A的SO - 8 MOSFET的第二PowerMesh⑩ |
| 文件頁數： | 1/6頁 |
| 文件大小： | 137K |
| 代理商： | STS1HNC60 |
1/6
PRELIMINARY DATA
July 2001
STS1HNC60
N-CHANNEL 600V - 7
- 0.4A SO-8
PowerMeshII MOSFET
I
TYPICAL R
DS
(on) = 7
I
EXTREMELY HIGH dv/dt CAPABILITY
I
100% AVALANCHE TESTED
I
NEW HIGH VOLTAGE BENCHMARK
I
GATE CHARGE MINIMIZED
DESCRIPTION
Using the latest high voltage MESH OVERLAYII
process, STMicroelectronics has designed an ad-
vanced family of power MOSFETs with outstanding
performances. The new patent pending strip layout
coupled with the Company’s proprietary edge termi-
nation structure, gives the lowest RDS(on) per area,
exceptional avalanche and dv/dt capabilities and
unrivalled gate charge and switching characteris-
tics.
APPLICATIONS
I
SWITCH MODE LOW POWER SUPPIES
(SMPS)
I
CFL
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
Drain-source Voltage (V
GS
= 0)
V
DGR
Drain-gate Voltage (R
GS
= 20 k
)
V
GS
Gate- source Voltage
I
D
Drain Current (continuos) at T
C
= 25°C
I
D
Drain Current (continuos) at T
C
= 100°C
I
DM
(
G
)
Drain Current (pulsed)
P
TOT
Total Dissipation at T
C
= 25°C
Derating Factor
dv/dt(1)
Peak Diode Recovery voltage slope
T
stg
Storage Temperature
T
j
Max. Operating Junction Temperature
()Pulse width limited by safe operating area
TYPE
V
DSS
R
DS(on)
I
D
STS1HNC60
600 V
< 8
0.36 A
Parameter
Value
Unit
600
V
600
V
± 30
V
0.36
A
0.22
A
1.44
A
2.5
W
0.028
3.5
W/°C
V/ns
–65 to 150
°C
150
°C
(1)I
SD
≤
0.36 A, di/dt
≤
100A/μs, V
DD
≤
V
(BR)DSS
, T
j
≤
T
JMAX.
SO-8
INTERNAL SCHEMATIC DIAGRAM
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