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參數(shù)資料
| 型號： | STU10NA50 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | N-Channel Enhancement Mode Fast Power MOS Transistors(N溝道增強模式快速功率MOS晶體管) |
| 中文描述： | N溝道增強模式快速功率MOS晶體管（不適用溝道增強模式快速功率馬鞍山晶體管） |
| 文件頁數(shù)： | 1/5頁 |
| 文件大小： | 72K |
| 代理商： | STU10NA50 |
STU10NA50
N - CHANNEL ENHANCEMENT MODE
FAST POWER MOS TRANSISTOR
PRELIMINARY DATA
I
TYPICAL R
DS(on)
= 0.5
I
±
30V GATE TO SOURCE VOLTAGE RATING
I
REPETITIVE AVALANCHE TESTED
I
LOW INTRINSIC CAPACITANCE
I
100% AVALANCHE TESTED
I
GATE CHARGE MINIMIZED
I
REDUCED THRESHOLD VOLTAGE SPREAD
DESCRIPTION
The Max220
TM
package is a new high volume
power package exibiting the same footprint as the
industry standard TO-220, but designed to
accomodate much larger silicon chips, normally
supplied in bigger packages. The increased die
capacity makes the device ideal to reduce
component count in multiple paralleled TO-220
designs and save board space with respect to
larger packages.
APPLICATIONS
I
HIGH CURRENT, HIGH SPEED SWITCHING
I
SWITCH MODE POWER SUPPLIES (SMPS)
I
DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES (UPS)
INTERNAL SCHEMATIC DIAGRAM
TYPE
V
DSS
R
DS(on)
< 0.6
I
D
STU10NA50
500 V
10.2 A
October 1997
123
Max220
TM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V
DS
V
DGR
Drain-source Voltage (V
GS
= 0)
Drain- gate Voltage (R
GS
= 20 k
)
Gate-source Voltage
Drain Current (continuous) at T
c
= 25
o
C
Drain Current (continuous) at T
c
= 100
o
C
500
V
500
V
V
GS
I
D
±
30
10.2
V
A
I
D
6.4
A
I
DM
(
)
P
tot
Drain Current (pulsed)
Total Dissipation at T
c
= 25
o
C
40.8
A
145
W
Derating Factor
1.16
W/
o
C
o
C
o
C
T
stg
Storage Temperature
-65 to 150
T
j
Max. Operating Junction Temperature
(
) Pulse width limited by safe operating area
150
1/5
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| STU10NB80 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N - CHANNEL 800V - 0.65ohm - 10A - Max220 PowerMESHO MOSFET |
| STU10NC70Z | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 700V - 0.58ohm - 9.4A Max220/I-Max220 Zener-Protected PowerMESH⑩III MOSFET |
| STU10NC70ZI | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 700V - 0.58ohm - 9.4A Max220/I-Max220 Zener-Protected PowerMESH⑩III MOSFET |
| STU10NM60N | 功能描述:MOSFET N-channel 600 V Mdmesh 8A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STU10NM65N | 功能描述:MOSFET N-Channel 650V Power MDmesh RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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