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參數資料
| 型號： | STW10NC70Z |
| 廠商： | 意法半導體 |
| 英文描述： | N-CHANNEL 700V - 0.58 ohm - 10.6A TO-247 Zener-Protected PowerMESH⑩III MOSFET |
| 中文描述： | N溝道高達700V - 0.58歐姆- 10.6A至247齊納保護PowerMESH⑩三MOSFET的 |
| 文件頁數： | 1/8頁 |
| 文件大小： | 249K |
| 代理商： | STW10NC70Z |
1/8
Sep 2000
STW10NC70Z
N-CHANNEL 700V - 0.58
- 10.6A TO-247
Zener-Protected PowerMESHIII MOSFET
I
TYPICAL R
DS
(on) = 0.58
I
EXTREMELY HIGH dv/dt CAPABILITY GATE-
TO-SOURCE ZENER DIODES
I
100% AVALANCHE TESTED
I
VERY LOW INTRINSIC CAPACITANCES
I
GATE CHARGE MINIMIZED
DESCRIPTION
The third generation of MESH OVERLAY
Power
MOSFETs for very high voltage exhibits unsur-
passed on-resistance per unit area while integrating
back-to-back Zener diodes between gate and
source. Such arrangement gives extra ESD capabil-
ity with higher ruggedness performance as request-
ed by a large variety of single-switch applications.
APPLICATIONS
I
SINGLE-ENDED SMPS IN MONITORS,
COMPUTER AND INDUSTRIAL APPLICATION
I
WELDING EQUIPMENT
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
Drain-source Voltage (V
GS
= 0)
V
DGR
Drain-gate Voltage (R
GS
= 20 k
)
V
GS
Gate- source Voltage
I
D
Drain Current (continuos) at T
C
= 25°C
I
D
Drain Current (continuos) at T
C
= 100°C
I
DM
(
G
)
Drain Current (pulsed)
P
TOT
Total Dissipation at T
C
= 25°C
Derating Factor
I
GS
Gate-source Current (*)
V
ESD(G-S)
Gate source ESD(HBM-C=100pF, R=15K
)
dv/dt (1)
Peak Diode Recovery voltage slope
T
stg
Storage Temperature
T
j
Max. Operating Junction Temperature
()Pulse width limited by safe operating area
(1)I
SD
≤
10.6A, di/dt
≤
100A/μs, V
DD
≤
V
(BR)DSS
, T
j
≤
T
JMAX.
(*)Limited only by maximum temperature allowed
TYPE
V
DSS
R
DS(on)
I
D
STW10NC70Z
700 V
< 0.75
10.6 A
Parameter
Value
Unit
700
V
700
V
±25
V
10.6
A
6.7
A
42
A
190
W
1.51
W/°C
±50
mA
4
KV
3
V/ns
–65 to 150
°C
150
°C
TO-247
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