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參數資料
| 型號： | STW11NK100Z |
| 廠商： | 意法半導體 |
| 英文描述： | N-CHANNEL 1000V - 1.1W - 8.3A TO-247 Zener-Protected SuperMESH⑩Power MOSFET |
| 中文描述： | N溝道1000V - 1.1W - 8.3A至247齊納保護SuperMESH⑩功率MOSFET |
| 文件頁數： | 1/9頁 |
| 文件大小： | 301K |
| 代理商： | STW11NK100Z |
1/9
December 2003
STW11NK100Z
N-CHANNEL 1000V - 1.1
- 8.3A TO-247
Zener-Protected SuperMESHPower MOSFET
I
TYPICAL R
DS
(on) = 1.1
I
EXTREMELY HIGH dv/dt CAPABILITY
I
100% AVALANCHE TESTED
I
GATE CHARGE MINIMIZED
I
VERY LOW INTRINSIC CAPACITANCES
I
VERY GOOD MANUFACTURING
REPEATIBILITY
DESCRIPTION
The SuperMESH series is obtained through an
extreme optimization of ST’s well established strip-
based PowerMESH layout. In addition to pushing
on-resistance significantly down, special care is tak-
en to ensure a very good dv/dt capability for the
most demanding applications. Such series comple-
ments ST full range of high voltage MOSFETs in-
cluding revolutionary MDmesh products.
APPLICATIONS
I
HIGH CURRENT, HIGH SPEED SWITCHING
I
IDEAL FOR OFF-LINE POWER SUPPLIES
ORDERING INFORMATION
SALES TYPE
TYPE
V
DSS
R
DS(on)
I
D
Pw
STW11NK100Z
1000 V
< 1.38
8.3 A
230 W
MARKING
PACKAGE
PACKAGING
STW11NK100Z
W11NK100Z
TO-247
TUBE
TO-247
1
2
3
INTERNAL SCHEMATIC DIAGRAM
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| STW12NK90Z | N-CHANNEL 900V - 0.72 ohm - 11A TO-247 Zener-Protected SuperMESH Power MOSFET |
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相關代理商/技術參數 |
參數描述 |
|---|---|
| STW11NK90Z | 功能描述:MOSFET N Ch 900V Zener SuperMESH 9.2A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STW11NM65N | 功能描述:MOSFET N-Channel 650V Pwr Mosfet RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STW11NM80 | 功能描述:MOSFET N-Ch 800 Volt 11 Amp Power MDmesh RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STW120NF10 | 功能描述:MOSFET POWER MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STW12N120K5 | 制造商:STMicroelectronics 功能描述:POWER MOSFET IN TO-3PF, H2PAK-2, TO-220 AND TO-247 PACKAGES - Tape and Reel |
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