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參數資料
| 型號： | STW47NM60 |
| 廠商： | 意法半導體 |
| 英文描述： | N-CHANNEL 600V - 0.075ohm - 47A TO-247 MDmesh⑩Power MOSFET |
| 中文描述： | N溝道600V的- 0.075ohm - 47A條至247的MDmesh⑩功率MOSFET |
| 文件頁數： | 1/6頁 |
| 文件大小： | 117K |
| 代理商： | STW47NM60 |
1/6
ADVANCED DATA
January 2003
STW47NM50
N-CHANNEL 500V - 0.065
- 45A TO-247
MDmeshPower MOSFET
(1) I
SD
≤
45A, di/dt
≤
400A/μs, V
DD
≤
V
(BR)DSS
, T
j
≤
T
JMAX.
TYPICAL R
DS
(on) = 0.065
HIGH dv/dt AND AVALANCHE CAPABILITIES
100% AVALANCHE TESTED
LOW INPUT CAPACITANCE AND GATE
CHARGE
LOW GATE INPUT RESISTANCE
TIGHT PROCESS CONTROL AND HIGH
MANUFACTURING YIELDS
DESCRIPTION
The MDmesh is a new revolutionary MOSFET
technology that associates the Multiple Drain pro-
cess with the Company’s PowerMESH horizontal
layout. The resulting product has an outstanding low
on-resistance, impressively high dv/dt and excellent
avalanche characteristics. The adoption of the
Company’s proprietary strip technique yields overall
dynamic performance that is significantly better than
that of similar competition’s products.
APPLICATIONS
The MDmesh family is very suitable for increasing
power density of high voltage converters allowing
system miniaturization and higher efficiencies.
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
Drain-source Voltage (V
GS
= 0)
V
DGR
Drain-gate Voltage (R
GS
= 20 k
)
V
GS
Gate- source Voltage
I
D
Drain Current (continuous) at T
C
= 25°C
I
D
Drain Current (continuous) at T
C
= 100°C
I
DM
( )
Drain Current (pulsed)
P
TOT
Total Dissipation at T
C
= 25°C
Derating Factor
dv/dt (1)
Peak Diode Recovery voltage slope
T
stg
Storage Temperature
T
j
Max. Operating Junction Temperature
()Pulse width limited by safe operating area
TYPE
V
DSS
R
DS(on)
R
ds(on)
*Q
g
I
D
STW47NM50
500V
< 0.085
5.6
*nC
45 A
Parameter
Value
Unit
500
V
500
V
±30
V
45
A
28.4
A
180
A
417
W
2.08
15
W/°C
V/ns
–65 to 150
°C
150
°C
1
2
3
TO-247
INTERNAL SCHEMATIC DIAGRAM
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相關代理商/技術參數 |
參數描述 |
|---|---|
| STW47NM60ND | 功能描述:MOSFET N-Ch 600V 0.075 Ohm 35A FDmesh II RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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| STW4810_07 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:Power management for multimedia processors |
| STW4810_0709 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:Power management for multimedia processors |
| STW4810BHD | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:Power Management for Multimedia Processors |
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