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參數資料
| 型號： | TF28F008SA-100 |
| 廠商： | INTEL CORP |
| 元件分類： | DRAM |
| 英文描述： | 8-MBIT (1-MBIT x 8) FlashFileTM MEMORY |
| 中文描述： | 1M X 8 FLASH 12V PROM, 100 ns, PDSO40 |
| 封裝： | 10 X 20 MM, REVERSE, TSOP-40 |
| 文件頁數： | 1/33頁 |
| 文件大小： | 466K |
| 代理商： | TF28F008SA-100 |
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*
Other brands and names are the property of their respective owners.
Information in this document is provided in connection with Intel products. Intel assumes no liability whatsoever, including infringement of any patent or
copyright, for sale and use of Intel products except as provided in Intel’s Terms and Conditions of Sale for such products. Intel retains the right to make
changes to these specifications at any time, without notice. Microcomputer Products may have minor variations to this specification known as errata.
November 1995
COPYRIGHT
INTEL CORPORATION, 1995
Order Number: 290429-005
28F008SA
8-MBIT (1-MBIT x 8) FlashFile
TM
MEMORY
Extended Temperature Specifications Included
Y
High-Density Symmetrically-Blocked
Architecture
D Sixteen 64-Kbyte Blocks
Y
Extended Cycling Capability
D 100,000 Block Erase Cycles
D 1.6 Million Block Erase
Cycles per Chip
Y
Automated Byte Write and Block Erase
D Command User Interface
D Status Register
Y
System Performance Enhancements
D RY/BY
Y
Status Output
D Erase Suspend Capability
Y
Deep Power-Down Mode
D 0.20
m
A I
CC
Typical
Y
Very High-Performance Read
D 85 ns Maximum Access Time
Y
SRAM-Compatible Write Interface
Y
Hardware Data Protection Feature
D Erase/Write Lockout during Power
Transitions
Y
Industry Standard Packaging
D 40-Lead TSOP, 44-Lead PSOP
Y
ETOX III Nonvolatile Flash Technology
D 12V Byte Write/Block Erase
Intel’s 28F008SA 8-Mbit FlashFile
TM
Memory is the highest density nonvolatile read/write solution for sol-
id-state storage. The 28F008SA’s extended cycling, symmetrically blocked architecture, fast access time,
write automation and low power consumption provide a more reliable, lower power, lighter weight and higher
performance alternative to traditional rotating disk technology. The 28F008SA brings new capabilities to porta-
ble computing. Application and operating system software stored in resident flash memory arrays provide
instant-on, rapid execute-in-place and protection from obsolescence through in-system software updates.
Resident software also extends system battery life and increases reliability by reducing disk drive accesses.
For high density data acquisition applications, the 28F008SA offers a more cost-effective and reliable alterna-
tive to SRAM and battery. Traditional high density embedded applications, such as telecommunications, can
take advantage of the 28F008SA’s nonvolatility, blocking and minimal system code requirements for flexible
firmware and modular software designs.
The 28F008SA is offered in 40-lead TSOP (standard and reverse) and 44-lead PSOP packages. Pin assign-
ments simplify board layout when integrating multiple devices in a flash memory array or subsystem. This
device uses an integrated Command User Interface and state machine for simplified block erasure and byte
write. The 28F008SA memory map consists of 16 separately erasable 64-Kbyte blocks.
Intel’s 28F008SA employs advanced CMOS circuitry for systems requiring low power consumption and noise
immunity. Its 85 ns access time provides superior performance when compared with magnetic storage media.
A deep powerdown mode lowers power consumption to 1
m
W typical thru V
CC
, crucial in portable computing,
handheld instrumentation and other low-power applications. The RP
Y
power control input also provides
absolute data protection during system powerup/down.
Manufactured on Intel’s 0.8 micron ETOX process, the 28F008SA provides the highest levels of quality,
reliability and cost-effectiveness.
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