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參數資料
| 型號： | THN6301E |
| 廠商： | Tachyonics CO,. LTD. |
| 英文描述： | NPN SiGe RF TRANSISTOR |
| 中文描述： | npn型硅鍺射頻晶體管 |
| 文件頁數： | 1/11頁 |
| 文件大?。?/td> | 217K |
| 代理商： | THN6301E |
THN6301 Series
□
Application
LNA and wide band amplifier up to GHz range
□
Features
o Low Noise Figure
NF = 1.1 dB Typ. @ f = 1 GHz, V
CE
= 8 V, I
C
= 5 mA
o High Power Gain
MAG =18 dB Typ. @ f = 1 GHz, V
CE
= 8 V, I
C
=15 mA
o High Transition Frequency
f
T
= 10 GHz Typ. @ V
CE
= 8 V, I
C
= 15 mA
Pin Configuration
Pin No
1
2
3
□
Available Package
Product
THN6301S
THN6301U
THN6301Z
THN6301E
THN6301KF
□
h
FE
Classification
Marking
h
FE
□
Absolute Maximum Ratings
Caution : ESD sensitive device
Unit : mm
Dimension
2.9
ⅹ
1.3, 1.2t
2.0
ⅹ
1.25, 1.0t
2.0
ⅹ
1.25, 1.0t
SOT523
SOT623F
1.6
ⅹ
0.8, 0.8t
1.4
ⅹ
0.8, 0.6t
SOT23
SOT323
SOT343
Package
E
C
Emitter
Collector
Symbol
B
Description
Base
150
mW
℃
℃
2.5
65
150
-65 ~ 150
V
CBO
V
CEO
V
EBO
Ic
P
T
T
STG
T
J
Emitter to Base Breakdown Voltage
Collector Current (DC)
Total Power Dissipation
Storage Temperature
Operating Junction Temperature
Symbol
Parameter
Collector to Base Breakdown Voltage
Collector to Emitter Breakdown Voltage
V
V
V
25
12
AA1
AA2
125 to 300 80 to 160
Unit
Ratings
mA
NPN SiGe RF TRANSISTOR
SOT 523 Unit in mm
www.tachyonics.co.kr
- 1/11 -
Aug.-2005
Rev 2.0
相關PDF資料 |
PDF描述 |
|---|---|
| THN6301KF | NPN SiGe RF TRANSISTOR |
| THN6301Z | NPN SiGe RF TRANSISTOR |
| THN6501S | NPN Planer RF TRANSISTOR |
| THN6501Z | NPN SiGe RF TRANSISTOR |
| THN6501 | NPN SiGe RF TRANSISTOR |
相關代理商/技術參數 |
參數描述 |
|---|---|
| THN6301KF | 制造商:AUK 制造商全稱:AUK corp 功能描述:SiGe NPN Transistor |
| THN6301S | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:NPN Planer RF TRANSISTOR |
| THN6301U | 制造商:AUK 制造商全稱:AUK corp 功能描述:SiGe NPN Transistor |
| THN6301Z | 制造商:AUK 制造商全稱:AUK corp 功能描述:SiGe NPN Transistor |
| THN6501 | 制造商:TACHYONICS 制造商全稱:TACHYONICS 功能描述:NPN SiGe RF TRANSISTOR |
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