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參數資料
| 型號： | TIG004SS |
| 廠商： | Sanyo Electric Co.,Ltd. |
| 英文描述： | Light-Controlling Strobe Applications |
| 中文描述： | 光控頻閃燈應用 |
| 文件頁數： | 1/3頁 |
| 文件大?。?/td> | 21K |
| 代理商： | TIG004SS |
TIG004SS
No.7397-1/3
Specifications
Absolute Maximum Ratings
at Ta=25
°
C
Parameter
Symbol
VCES
VGES
VGES
ICP
Tch
Tstg
Conditions
Ratings
Unit
V
V
V
A
°
C
°
C
Collector-to-Emitter Voltage
Gate-to-Emitter Voltage (DC)
Gate-to-Emitter Voltage (Pulse)
Collector Current (Pulse)
Channel Temperature
Storage Temperature
400
±
6
±
8
150
150
PW
≤
500
μ
s, duty cycle
≤
0.5%
--40 to +150
Electrical Characteristics
at Ta=25
°
C
Ratings
typ
Parameter
Symbol
Conditions
min
max
Unit
Collector-to-Emitter Breakdown Voltage
Collector-to-Emitter Cutoff Current
Gate-to-Emitter Leakage Current
Gate-to-Emitter Threshold Voltage
V(BR)CES
ICES
IGES
VGE(off)
VCE(sat)1
VCE(sat)2
Cies
Coes
Cres
IC=5mA, VGE=0
VCE=320V, VGE=0
VGE=
±
6V, VCE=0
VCE=10V, IC=1mA
IC=150A, VGE=4V
IC=60A, VGE=2.5V
VCE=10V, f=1MHz
VCE=10V, f=1MHz
VCE=10V, f=1MHz
400
V
μ
A
μ
A
V
V
V
pF
pF
pF
10
±
10
1.2
5.5
3.4
0.5
Collector-to-Emitter Saturation Voltage
4.2
2.4
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Note : TIG004SS has protection diode between gate and emitter but handling it requires sufficient care to be taken.
3300
75
40
Features
Low-saturation voltage.
4V drive.
Enhansment type.
Built-in Gate-to-Emitter protection diode.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : ENN7397
TIG004SS
Package Dimensions
unit : mm
2203
[TIG004SS]
22004 TS IM TA-3794
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
N-Channel IGBT
Light-Controlling Strobe Applications
1
4
5
8
4
0
6
0.2
5.0
0.595
1.27
1
0
1
0.43
1 : Emitter
2 : Emitter
3 : Emitter
4 : Gate
5 : Collector
6 : Collector
7 : Collector
8 : Collector
SANYO : SOP8
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